Fluidized-Bed MOCVD of Bi2O3 Thin Films from Bismuth Triphenyl under Atmospheric Pressure. Reuge, N., Dexpert-Ghys, J., & Caussat, B. Chemical Vapor Deposition, 16(4-6):123--+, June, 2010.
doi  abstract   bibtex   
Bismuth oxide thin films are of great interest due to their significant band gap, high refractive index, and dielectric permittivity, as well as marked photoconductivity and photoluminescence.([1]) These properties make Bi2O3 films well suited for many applications such as microelectronics,121 sensor technology,([3]) optical coatings,([4]) and ceramic glass manufacturing.I'l
@article{ reuge_fluidized-bed_2010,
  title = {Fluidized-Bed {MOCVD} of {Bi2O3} Thin Films from Bismuth Triphenyl under Atmospheric Pressure},
  volume = {16},
  issn = {0948-1907},
  doi = {10.1002/cvde.200904280},
  abstract = {Bismuth oxide thin films are of great interest due to their significant band gap, high refractive index, and dielectric permittivity, as well as marked photoconductivity and photoluminescence.([1]) These properties make {Bi2O3} films well suited for many applications such as microelectronics,121 sensor technology,([3]) optical coatings,([4]) and ceramic glass {manufacturing.I'l}},
  language = {English},
  number = {4-6},
  journal = {Chemical Vapor Deposition},
  author = {Reuge, Nicolas and Dexpert-Ghys, Jeannette and Caussat, Brigitte},
  month = {June},
  year = {2010},
  keywords = {chemical-vapor-deposition, cvd, growth, oxide},
  pages = {123--+}
}

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