Effects of protein inter-layers on cell-diamond FET characteristics. Rezek, B., Krátká, M., Kromka, A., & Kalbacova, M. Biosensors and Bioelectronics, 26(4):1307--1312, December, 2010.
Effects of protein inter-layers on cell-diamond FET characteristics [link]Paper  doi  abstract   bibtex   
Diamond is recognized as an attractive material for merging solid-state and biological systems. The advantage of diamond field-effect transistors (FET) is that they are chemically resistant, bio-compatible, and can operate without gate oxides. Solution-gated FETs based on H-terminated nanocrystalline diamond films exhibiting surface conductivity are employed here for studying effects of fetal bovine serum (FBS) proteins and osteoblastic SAOS-2 cells on diamond electronic properties. FBS proteins adsorbed on the diamond FETs permanently decrease diamond conductivity as reflected by the -45 mV shift of the FET transfer characteristics. Cell cultivation for 2 days results in a further shift by another -78 mV. We attribute it to a change of diamond material properties rather than purely to the field-effect. Increase in gate leakage currents (by a factor of 4) indicates that the FBS proteins also decrease the diamond-electrolyte electronic barrier induced by C-H surface dipoles. We propose a model where the proteins replace ions in the very vicinity of the H-terminated diamond surface.
@article{ rezek_effects_2010,
  title = {Effects of protein inter-layers on cell-diamond {FET} characteristics},
  volume = {26},
  issn = {0956-5663},
  url = {http://www.sciencedirect.com/science/article/B6TFC-50JHBSF-2/2/1d83db55626057bcd5149513a229057b},
  doi = {10.1016/j.bios.2010.07.027},
  abstract = {Diamond is recognized as an attractive material for merging solid-state and biological systems. The advantage of diamond field-effect transistors ({FET}) is that they are chemically resistant, bio-compatible, and can operate without gate oxides. Solution-gated {FETs} based on H-terminated nanocrystalline diamond films exhibiting surface conductivity are employed here for studying effects of fetal bovine serum ({FBS}) proteins and osteoblastic {SAOS}-2 cells on diamond electronic properties. {FBS} proteins adsorbed on the diamond {FETs} permanently decrease diamond conductivity as reflected by the -45 {mV} shift of the {FET} transfer characteristics. Cell cultivation for 2 days results in a further shift by another -78 {mV}. We attribute it to a change of diamond material properties rather than purely to the field-effect. Increase in gate leakage currents (by a factor of 4) indicates that the {FBS} proteins also decrease the diamond-electrolyte electronic barrier induced by C-H surface dipoles. We propose a model where the proteins replace ions in the very vicinity of the H-terminated diamond surface.},
  number = {4},
  urldate = {2011-02-08TZ},
  journal = {Biosensors and Bioelectronics},
  author = {Rezek, Bohuslav and Krátká, Marie and Kromka, Alexander and Kalbacova, Marie},
  month = {December},
  year = {2010},
  keywords = {Bioelectronics, Cells, Diamond, Field-effect transistors, Surface conductivity, proteins},
  pages = {1307--1312}
}

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