Effects of protein inter-layers on cell-diamond FET characteristics. Rezek, B., Krátká, M., Kromka, A., & Kalbacova, M. Biosensors and Bioelectronics, 26(4):1307--1312, December, 2010. Paper doi abstract bibtex Diamond is recognized as an attractive material for merging solid-state and biological systems. The advantage of diamond field-effect transistors (FET) is that they are chemically resistant, bio-compatible, and can operate without gate oxides. Solution-gated FETs based on H-terminated nanocrystalline diamond films exhibiting surface conductivity are employed here for studying effects of fetal bovine serum (FBS) proteins and osteoblastic SAOS-2 cells on diamond electronic properties. FBS proteins adsorbed on the diamond FETs permanently decrease diamond conductivity as reflected by the -45 mV shift of the FET transfer characteristics. Cell cultivation for 2 days results in a further shift by another -78 mV. We attribute it to a change of diamond material properties rather than purely to the field-effect. Increase in gate leakage currents (by a factor of 4) indicates that the FBS proteins also decrease the diamond-electrolyte electronic barrier induced by C-H surface dipoles. We propose a model where the proteins replace ions in the very vicinity of the H-terminated diamond surface.
@article{ rezek_effects_2010,
title = {Effects of protein inter-layers on cell-diamond {FET} characteristics},
volume = {26},
issn = {0956-5663},
url = {http://www.sciencedirect.com/science/article/B6TFC-50JHBSF-2/2/1d83db55626057bcd5149513a229057b},
doi = {10.1016/j.bios.2010.07.027},
abstract = {Diamond is recognized as an attractive material for merging solid-state and biological systems. The advantage of diamond field-effect transistors ({FET}) is that they are chemically resistant, bio-compatible, and can operate without gate oxides. Solution-gated {FETs} based on H-terminated nanocrystalline diamond films exhibiting surface conductivity are employed here for studying effects of fetal bovine serum ({FBS}) proteins and osteoblastic {SAOS}-2 cells on diamond electronic properties. {FBS} proteins adsorbed on the diamond {FETs} permanently decrease diamond conductivity as reflected by the -45 {mV} shift of the {FET} transfer characteristics. Cell cultivation for 2 days results in a further shift by another -78 {mV}. We attribute it to a change of diamond material properties rather than purely to the field-effect. Increase in gate leakage currents (by a factor of 4) indicates that the {FBS} proteins also decrease the diamond-electrolyte electronic barrier induced by C-H surface dipoles. We propose a model where the proteins replace ions in the very vicinity of the H-terminated diamond surface.},
number = {4},
urldate = {2011-02-08TZ},
journal = {Biosensors and Bioelectronics},
author = {Rezek, Bohuslav and Krátká, Marie and Kromka, Alexander and Kalbacova, Marie},
month = {December},
year = {2010},
keywords = {Bioelectronics, Cells, Diamond, Field-effect transistors, Surface conductivity, proteins},
pages = {1307--1312}
}
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{"_id":"tRfcNhwNDxxr3Hkc7","bibbaseid":"rezek-krtk-kromka-kalbacova-effectsofproteininterlayersoncelldiamondfetcharacteristics-2010","downloads":0,"creationDate":"2015-02-03T19:44:44.158Z","title":"Effects of protein inter-layers on cell-diamond FET characteristics","author_short":["Rezek, B.","Krátká, M.","Kromka, A.","Kalbacova, M."],"year":2010,"bibtype":"article","biburl":"https://api.zotero.org/users/9306/collections/JQW749CI/items?key=56utL422mxibPpzqIPfQYj0t&format=bibtex&limit=100","bibdata":{"abstract":"Diamond is recognized as an attractive material for merging solid-state and biological systems. The advantage of diamond field-effect transistors (FET) is that they are chemically resistant, bio-compatible, and can operate without gate oxides. Solution-gated FETs based on H-terminated nanocrystalline diamond films exhibiting surface conductivity are employed here for studying effects of fetal bovine serum (FBS) proteins and osteoblastic SAOS-2 cells on diamond electronic properties. FBS proteins adsorbed on the diamond FETs permanently decrease diamond conductivity as reflected by the -45 mV shift of the FET transfer characteristics. Cell cultivation for 2 days results in a further shift by another -78 mV. We attribute it to a change of diamond material properties rather than purely to the field-effect. Increase in gate leakage currents (by a factor of 4) indicates that the FBS proteins also decrease the diamond-electrolyte electronic barrier induced by C-H surface dipoles. We propose a model where the proteins replace ions in the very vicinity of the H-terminated diamond surface.","author":["Rezek, Bohuslav","Krátká, Marie","Kromka, Alexander","Kalbacova, Marie"],"author_short":["Rezek, B.","Krátká, M.","Kromka, A.","Kalbacova, M."],"bibtex":"@article{ rezek_effects_2010,\n title = {Effects of protein inter-layers on cell-diamond {FET} characteristics},\n volume = {26},\n issn = {0956-5663},\n url = {http://www.sciencedirect.com/science/article/B6TFC-50JHBSF-2/2/1d83db55626057bcd5149513a229057b},\n doi = {10.1016/j.bios.2010.07.027},\n abstract = {Diamond is recognized as an attractive material for merging solid-state and biological systems. The advantage of diamond field-effect transistors ({FET}) is that they are chemically resistant, bio-compatible, and can operate without gate oxides. Solution-gated {FETs} based on H-terminated nanocrystalline diamond films exhibiting surface conductivity are employed here for studying effects of fetal bovine serum ({FBS}) proteins and osteoblastic {SAOS}-2 cells on diamond electronic properties. {FBS} proteins adsorbed on the diamond {FETs} permanently decrease diamond conductivity as reflected by the -45 {mV} shift of the {FET} transfer characteristics. Cell cultivation for 2 days results in a further shift by another -78 {mV}. We attribute it to a change of diamond material properties rather than purely to the field-effect. Increase in gate leakage currents (by a factor of 4) indicates that the {FBS} proteins also decrease the diamond-electrolyte electronic barrier induced by C-H surface dipoles. We propose a model where the proteins replace ions in the very vicinity of the H-terminated diamond surface.},\n number = {4},\n urldate = {2011-02-08TZ},\n journal = {Biosensors and Bioelectronics},\n author = {Rezek, Bohuslav and Krátká, Marie and Kromka, Alexander and Kalbacova, Marie},\n month = {December},\n year = {2010},\n keywords = {Bioelectronics, Cells, Diamond, Field-effect transistors, Surface conductivity, proteins},\n pages = {1307--1312}\n}","bibtype":"article","doi":"10.1016/j.bios.2010.07.027","id":"rezek_effects_2010","issn":"0956-5663","journal":"Biosensors and Bioelectronics","key":"rezek_effects_2010","keywords":"Bioelectronics, Cells, Diamond, Field-effect transistors, Surface conductivity, proteins","month":"December","number":"4","pages":"1307--1312","title":"Effects of protein inter-layers on cell-diamond FET characteristics","type":"article","url":"http://www.sciencedirect.com/science/article/B6TFC-50JHBSF-2/2/1d83db55626057bcd5149513a229057b","urldate":"2011-02-08TZ","volume":"26","year":"2010","bibbaseid":"rezek-krtk-kromka-kalbacova-effectsofproteininterlayersoncelldiamondfetcharacteristics-2010","role":"author","urls":{"Paper":"http://www.sciencedirect.com/science/article/B6TFC-50JHBSF-2/2/1d83db55626057bcd5149513a229057b"},"keyword":["Bioelectronics","Cells","Diamond","Field-effect transistors","Surface conductivity","proteins"],"downloads":0},"search_terms":["effects","protein","inter","layers","cell","diamond","fet","characteristics","rezek","krátká","kromka","kalbacova"],"keywords":["bioelectronics","cells","diamond","field-effect transistors","surface conductivity","proteins"],"authorIDs":[],"dataSources":["WPnZAo8YwWpk4So4c"]}