@article{ rezek_creating_2009,
  title = {Creating nanocrystals in amorphous silicon using a conductive tip},
  volume = {20},
  issn = {0957-4484},
  url = {http://www.iop.org/EJ/abstract/0957-4484/20/4/045302},
  abstract = {Field-enhanced metal-induced solid phase crystallization ({FE}-{MISPC}) of
amorphous silicon is scaled down to nanoscale dimensions by using a
sharp conductive tip in atomic force microscopy ({AFM}) as one of the
electrodes. The room temperature process is driven by the electrical
current of the order of 100 {pA} between the tip and the bottom
nickel electrode. This results in energy transfer rates of
30-50 {nJ} s[?]1. Amplitude of the current is limited by a
{MOSFET} transistor to avoid electrical discharge from parasitic
parallel capacitance. Limiting the current amplitude and control of
the transferred energy ([?]100 {nJ}) enables formation of silicon
crystals with dimensions smaller than 100 nm in the amorphous
film. Formation of the nanocrystals is localized by the {AFM} tip
position. The presence of nanocrystals is detected by current-sensing
{AFM} and independently corroborated by micro-Raman spectroscopy. The
nanocrystal formation is discussed based on a model considering
microscopic electrical contact, thermodynamics of crystallization and
silicide formation.},
  number = {4},
  urldate = {2009-01-21TZ},
  journal = {Nanotechnology},
  author = {Rezek, B. and Sípek, E. and Ledinský, M. and Stuchlík, J. and Vetushka, A. and Kocka, J.},
  year = {2009},
  pages = {045302}
}

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