Si doped hafnium oxide - A ``fragile'' ferroelectric system. Richter, C., Schenk, T., Park, M. H., Tscharntke, F. A, Grimley, E. D, LeBeau, J. M, Zhou, C., Fancher, C. M, Jones, J. L, Mikolajick, T., & Schroeder, U. Advanced Electronic Materials, 3:1700131, October, 2017.
doi  bibtex   
@ARTICLE{Richter2017-ho,
  title    = "{Si doped hafnium oxide - A ``fragile'' ferroelectric system}",
  author   = "Richter, Claudia and Schenk, Tony and Park, Min Hyuk and
              Tscharntke, Franziska A and Grimley, Everett D and LeBeau, James M
              and Zhou, Chuanzhen and Fancher, Chris M and Jones, Jacob L and
              Mikolajick, Thomas and Schroeder, Uwe",
  journal  = "Advanced Electronic Materials",
  volume   =  3,
  pages    =  1700131,
  month    =  oct,
  year     =  2017,
  keywords = "Landau theory; Rietveld analysis; ferroelectrics; hafnium
              oxide;LeBeau Group",
  doi      = "10.1002/aelm.201700131"
}

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