Si doped hafnium oxide - A ``fragile'' ferroelectric system. Richter, C., Schenk, T., Park, M. H., Tscharntke, F. A, Grimley, E. D, LeBeau, J. M, Zhou, C., Fancher, C. M, Jones, J. L, Mikolajick, T., & Schroeder, U. Advanced Electronic Materials, 3:1700131, October, 2017. doi bibtex @ARTICLE{Richter2017-ho,
title = "{Si doped hafnium oxide - A ``fragile'' ferroelectric system}",
author = "Richter, Claudia and Schenk, Tony and Park, Min Hyuk and
Tscharntke, Franziska A and Grimley, Everett D and LeBeau, James M
and Zhou, Chuanzhen and Fancher, Chris M and Jones, Jacob L and
Mikolajick, Thomas and Schroeder, Uwe",
journal = "Advanced Electronic Materials",
volume = 3,
pages = 1700131,
month = oct,
year = 2017,
keywords = "Landau theory; Rietveld analysis; ferroelectrics; hafnium
oxide;LeBeau Group",
doi = "10.1002/aelm.201700131"
}
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