@Article{Robinson:1990:HOS,
  author =       "Phillip Robinson",
  title =        "The {High-Octane} Semiconductor: Chip makers move
                 gallium arsenide from curiosity to practicality",
  journal =      j-BYTE,
  volume =       "15",
  number =       "1",
  pages =        "251--258",
  month =        jan,
  year =         "1990",
  CODEN =        "BYTEDJ",
  ISSN =         "0360-5280 (print), 1082-7838 (electronic)",
  ISSN-L =       "0360-5280",
  bibdate =      "Thu Sep 12 17:47:21 MDT 1996",
  bibsource =    "https://www.math.utah.edu/pub/tex/bib/byte1990.bib",
  acknowledgement = ack-nhfb,
  chemicalindex = "GaAs/int As/int Ga/int GaAs/bin As/bin Ga/bin",
  classification = "B1265B (Logic circuits); B2520D (II-VI and III-V
                 semiconductors); B2570 (Semiconductor integrated
                 circuits)",
  keywords =     "GaAs; Gallium arsenide; Group III-V semiconductor
                 technology",
  thesaurus =    "Digital integrated circuits; Gallium arsenide; III-V
                 semiconductors; Integrated circuit technology",
}

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