The High-Octane Semiconductor: Chip makers move gallium arsenide from curiosity to practicality. Robinson, P. Byte Magazine, 15(1):251–258, January, 1990. bibtex @Article{Robinson:1990:HOS,
author = "Phillip Robinson",
title = "The {High-Octane} Semiconductor: Chip makers move
gallium arsenide from curiosity to practicality",
journal = j-BYTE,
volume = "15",
number = "1",
pages = "251--258",
month = jan,
year = "1990",
CODEN = "BYTEDJ",
ISSN = "0360-5280 (print), 1082-7838 (electronic)",
ISSN-L = "0360-5280",
bibdate = "Thu Sep 12 17:47:21 MDT 1996",
bibsource = "https://www.math.utah.edu/pub/tex/bib/byte1990.bib",
acknowledgement = ack-nhfb,
chemicalindex = "GaAs/int As/int Ga/int GaAs/bin As/bin Ga/bin",
classification = "B1265B (Logic circuits); B2520D (II-VI and III-V
semiconductors); B2570 (Semiconductor integrated
circuits)",
keywords = "GaAs; Gallium arsenide; Group III-V semiconductor
technology",
thesaurus = "Digital integrated circuits; Gallium arsenide; III-V
semiconductors; Integrated circuit technology",
}
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