Band Engineering of Dangling-Bond Wires on the Si(100)H Surface. Robles, R., Kepenekian, M., Joachim, C., Rurali, R., & Lorente, N. In On-Surface Atomic Wires and Logic Gates, pages 83–93. Springer, Cham, 2017. ![Band Engineering of Dangling-Bond Wires on the Si(100)H Surface [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex Nanoscale devices need to be connected among them and to the macroscopic world. Ideally, interconnects embedded in the environment holding the device will have an undeniable practical and technological advantage. Since silicon surfaces dominate nano- and micro-technologies, the crafting of nanowires on these surfaces has been suggested to be the way to create effective interconnecting wires. Here, we review the work done on dangling-bond wires formed by removing passivated agents from the Si(100)-H surface. These wires are formed by adjacent dangling bonds that rehybridize and create a surface-confined band structure capable of driving charge and spin along the surface. Unfortunately, the 1-D character of these wires leads to instabilities that create band gaps. The way to go is then to engineer the band gaps so as to create low-gap systems or directly metallic wires. Two strategies are reviewed in this chapter. One is the atom manipulation of wires to find the geometries that favored low-gap dangling-bond wires. The second one is the use of doping to change the electronic properties of the wires.
@incollection{robles_band_2017,
title = {Band {Engineering} of {Dangling}-{Bond} {Wires} on the {Si}(100){H} {Surface}},
url = {https://link.springer.com/chapter/10.1007/978-3-319-51847-3_5},
abstract = {Nanoscale devices need to be connected among them and to the macroscopic world. Ideally, interconnects embedded in the environment holding the device will have an undeniable practical and technological advantage. Since silicon surfaces dominate nano- and micro-technologies, the crafting of nanowires on these surfaces has been suggested to be the way to create effective interconnecting wires. Here, we review the work done on dangling-bond wires formed by removing passivated agents from the Si(100)-H surface. These wires are formed by adjacent dangling bonds that rehybridize and create a surface-confined band structure capable of driving charge and spin along the surface. Unfortunately, the 1-D character of these wires leads to instabilities that create band gaps. The way to go is then to engineer the band gaps so as to create low-gap systems or directly metallic wires. Two strategies are reviewed in this chapter. One is the atom manipulation of wires to find the geometries that favored low-gap dangling-bond wires. The second one is the use of doping to change the electronic properties of the wires.},
language = {en},
urldate = {2017-03-09},
booktitle = {On-{Surface} {Atomic} {Wires} and {Logic} {Gates}},
publisher = {Springer, Cham},
author = {Robles, Roberto and Kepenekian, Michael and Joachim, Christian and Rurali, Ricardo and Lorente, Nicolas},
year = {2017},
doi = {10.1007/978-3-319-51847-3_5},
keywords = {\_tablet},
pages = {83--93},
}
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