Electronic structures and photoelectron spectra of Si[sup - ][sub 3] and Si[sup - ][sub 4]. Rohlfing, C. M. & Raghavachari, K. The Journal of Chemical Physics, 96(3):2114–2117, February, 1992. Paper doi bibtex @article{rohlfing_electronic_1992,
title = {Electronic structures and photoelectron spectra of {Si}[sup - ][sub 3] and {Si}[sup - ][sub 4]},
volume = {96},
url = {http://link.aip.org/link/?JCP/96/2114/1},
doi = {10.1063/1.462062},
number = {3},
urldate = {2008-10-31},
journal = {The Journal of Chemical Physics},
author = {Rohlfing, Celeste McMichael and Raghavachari, Krishnan},
month = feb,
year = {1992},
keywords = {AFFINITY, ANIONS, EXCITED STATES, ION PAIRS, MOLECULAR IONS, MOLECULAR STRUCTURE, PHOTOELECTRON SPECTROSCOPY, QUANTUM CHEMISTRY, RESOLUTION, SILICON IONS, ab initio calculations, electronic structure, ground states, molecular clusters, silicon, vibrational states},
pages = {2114--2117},
}
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