Electronic structures and photoelectron spectra of Si[sup - ][sub 3] and Si[sup - ][sub 4]. Rohlfing, C. M. & Raghavachari, K. The Journal of Chemical Physics, 96(3):2114–2117, February, 1992.
Electronic structures and photoelectron spectra of Si[sup - ][sub 3] and Si[sup - ][sub 4] [link]Paper  doi  bibtex   
@article{rohlfing_electronic_1992,
	title = {Electronic structures and photoelectron spectra of {Si}[sup - ][sub 3] and {Si}[sup - ][sub 4]},
	volume = {96},
	url = {http://link.aip.org/link/?JCP/96/2114/1},
	doi = {10.1063/1.462062},
	number = {3},
	urldate = {2008-10-31},
	journal = {The Journal of Chemical Physics},
	author = {Rohlfing, Celeste McMichael and Raghavachari, Krishnan},
	month = feb,
	year = {1992},
	keywords = {AFFINITY, ANIONS, EXCITED STATES, ION PAIRS, MOLECULAR IONS, MOLECULAR STRUCTURE, PHOTOELECTRON SPECTROSCOPY, QUANTUM CHEMISTRY, RESOLUTION, SILICON IONS, ab initio calculations, electronic structure, ground states, molecular clusters, silicon, vibrational states},
	pages = {2114--2117},
}

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