Analytical compact modeling of GMR based current sensors Application to power measurement at the IC level. Roldan, A., Reig, C., Cubells-Beltran, M. D., Roldan, J. B., Ramirez, D., Cardoso, S., & Freitas, P. P. SOLID-STATE ELECTRONICS, 54(12):1606-1612, DEC, 2010.
doi  abstract   bibtex   
An analytical compact model for giant magnetoresistance (GMR) based current sensors has been developed Different spin-valve based full Wheatstone bridge sensors with the current straps integrated in the chip have been considered These devices have been experimentally characterized in order to extract the model parameters In this respect we have focused on the sensors linear operation regime The model which allows the individual description of the magnetoresistive elements has been implemented in a circuit simulator by means of a behavioral description language Verilog-A We also propose the use of the devices in a direct power measurement application at the integrated circuit (IC) level by taking advantage of their multiplicative properties A simple circuit is suggested and analyzed in depth by means of the tested model showing promising results regarding the application range (C) 2010 Elsevier Ltd All rights reserved
@article{ ISI:000283978000022,
Author = {Roldan, A. and Reig, C. and Cubells-Beltran, M. D. and Roldan, J. B. and
   Ramirez, D. and Cardoso, S. and Freitas, P. P.},
Title = {{Analytical compact modeling of GMR based current sensors Application to
   power measurement at the IC level}},
Journal = {{SOLID-STATE ELECTRONICS}},
Year = {{2010}},
Volume = {{54}},
Number = {{12}},
Pages = {{1606-1612}},
Month = {{DEC}},
Abstract = {{An analytical compact model for giant magnetoresistance (GMR) based
   current sensors has been developed Different spin-valve based full
   Wheatstone bridge sensors with the current straps integrated in the chip
   have been considered These devices have been experimentally
   characterized in order to extract the model parameters In this respect
   we have focused on the sensors linear operation regime The model which
   allows the individual description of the magnetoresistive elements has
   been implemented in a circuit simulator by means of a behavioral
   description language Verilog-A We also propose the use of the devices in
   a direct power measurement application at the integrated circuit (IC)
   level by taking advantage of their multiplicative properties A simple
   circuit is suggested and analyzed in depth by means of the tested model
   showing promising results regarding the application range (C) 2010
   Elsevier Ltd All rights reserved}},
DOI = {{10.1016/j.sse.2010.07.012}},
ISSN = {{0038-1101}},
EISSN = {{1879-2405}},
ResearcherID-Numbers = {{Roldan, Juan B/C-6844-2012
   de Freitas, Susana Cardoso/B-6199-2013
   Freitas, Paulo J.P./B-6164-2013
   Reig, Candid/B-4253-2008
   Roldan Aranda, Andres/B-1850-2012
   Cubells-Beltran, Maria-Dolores/L-8508-2014}},
ORCID-Numbers = {{Roldan, Juan B/0000-0003-1662-6457
   de Freitas, Susana Cardoso/0000-0001-6913-6529
   Freitas, Paulo J.P./0000-0003-0015-1186
   Reig, Candid/0000-0001-8029-0068
   Roldan Aranda, Andres/0000-0001-6807-7053
   Cubells-Beltran, Maria-Dolores/0000-0002-7864-9593}},
Unique-ID = {{ISI:000283978000022}},
}

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