Interface and Doping Engineering of HfO2 Based Multi-Level RRAM: Towards Synaptic Simulation for Neuromorphic Computation. Roy, S., Wang, Q., Wang, Y., Zhang, Y., Zhai, S., Ren, W., Ye, Z., & Niu, G. In International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, June 17-19, 2019, pages 1–4, 2019. IEEE.
Interface and Doping Engineering of HfO2 Based Multi-Level RRAM: Towards Synaptic Simulation for Neuromorphic Computation [link]Paper  doi  bibtex   
@inproceedings{DBLP:conf/icicdt/RoyWWZZRYN19,
  author    = {Sourav Roy and
               Qiang Wang and
               Yunkun Wang and
               Yijun Zhang and
               Shijie Zhai and
               Wei Ren and
               Zuo{-}Guang Ye and
               Gang Niu},
  title     = {Interface and Doping Engineering of HfO2 Based Multi-Level {RRAM:}
               Towards Synaptic Simulation for Neuromorphic Computation},
  booktitle = {International Conference on {IC} Design and Technology, {ICICDT} 2019,
               Suzhou, China, June 17-19, 2019},
  pages     = {1--4},
  publisher = {{IEEE}},
  year      = {2019},
  url       = {https://doi.org/10.1109/ICICDT.2019.8790856},
  doi       = {10.1109/ICICDT.2019.8790856},
  timestamp = {Wed, 09 Sep 2020 01:00:00 +0200},
  biburl    = {https://dblp.org/rec/conf/icicdt/RoyWWZZRYN19.bib},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}

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