Deterministic and robust room-temperature exchange coupling in monodomain multiferroic BiFeO3 heterostructures. Saenrang, W., Davidson, B. A., Maccherozzi, F., Podkaminer, J. P., Irwin, J., Johnson, R. D., Freeland, J. W., Iniguez, J., Schad, J. L., Reierson, K., Frederick, J. C., Vaz, C. A. F., Howald, L., Kim, T. H., Ryu, S., Veenendaal, M. V., Radaelli, P. G., Dhesi, S. S., Rzchowski, M. S., & Eom, C. B. NATURE COMMUNICATIONS, NOV 17, 2017. doi abstract bibtex Exploiting multiferroic BiFeO3 thin films in spintronic devices requires deterministic and robust control of both internal magnetoelectric coupling in BiFeO3, as well as exchange coupling of its antiferromagnetic order to a ferromagnetic overlayer. Previous reports utilized approaches based on multi-step ferroelectric switching with multiple ferroelectric domains. Because domain walls can be responsible for fatigue, contain localized charges intrinsically or via defects, and present problems for device reproducibility and scaling, an alternative approach using a monodomain magnetoelectric state with single-step switching is desirable. Here we demonstrate room temperature, deterministic and robust, exchange coupling between monodomain BiFeO3 films and Co overlayer that is intrinsic (i.e., not dependent on domain walls). Direct coupling between BiFeO3 antiferromagnetic order and Co magnetization is observed, with similar to 90 degrees in-plane Co moment rotation upon single-step switching that is reproducible for hundreds of cycles. This has important consequences for practical, low power non-volatile magnetoelectric devices utilizing BiFeO3.
@article{ ISI:000415648900015,
Author = {Saenrang, W. and Davidson, B. A. and Maccherozzi, F. and Podkaminer, J.
P. and Irwin, J. and Johnson, R. D. and Freeland, J. W. and Iniguez, J.
and Schad, J. L. and Reierson, K. and Frederick, J. C. and Vaz, C. A. F.
and Howald, L. and Kim, T. H. and Ryu, S. and Veenendaal, M. V. and
Radaelli, P. G. and Dhesi, S. S. and Rzchowski, M. S. and Eom, C. B.},
Title = {{Deterministic and robust room-temperature exchange coupling in
monodomain multiferroic BiFeO3 heterostructures}},
Journal = {{NATURE COMMUNICATIONS}},
Year = {{2017}},
Volume = {{8}},
Month = {{NOV 17}},
Abstract = {{Exploiting multiferroic BiFeO3 thin films in spintronic devices requires
deterministic and robust control of both internal magnetoelectric
coupling in BiFeO3, as well as exchange coupling of its
antiferromagnetic order to a ferromagnetic overlayer. Previous reports
utilized approaches based on multi-step ferroelectric switching with
multiple ferroelectric domains. Because domain walls can be responsible
for fatigue, contain localized charges intrinsically or via defects, and
present problems for device reproducibility and scaling, an alternative
approach using a monodomain magnetoelectric state with single-step
switching is desirable. Here we demonstrate room temperature,
deterministic and robust, exchange coupling between monodomain BiFeO3
films and Co overlayer that is intrinsic (i.e., not dependent on domain
walls). Direct coupling between BiFeO3 antiferromagnetic order and Co
magnetization is observed, with similar to 90 degrees in-plane Co moment
rotation upon single-step switching that is reproducible for hundreds of
cycles. This has important consequences for practical, low power
non-volatile magnetoelectric devices utilizing BiFeO3.}},
DOI = {{10.1038/s41467-017-01581-6}},
Article-Number = {{1583}},
ISSN = {{2041-1723}},
ResearcherID-Numbers = {{Vaz, Carlos/A-7240-2012
Radaelli, Paolo/C-2952-2011
Schad, Jonathon/V-8997-2017
Iniguez, Jorge/B-6856-2009
}},
ORCID-Numbers = {{Vaz, Carlos/0000-0002-6209-8918
Radaelli, Paolo/0000-0002-6717-035X
Schad, Jonathon/0000-0002-8510-3919
Iniguez, Jorge/0000-0001-6435-3604
Irwin, Julian/0000-0002-4845-7558}},
Unique-ID = {{ISI:000415648900015}},
}
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Previous reports utilized approaches based on multi-step ferroelectric switching with multiple ferroelectric domains. Because domain walls can be responsible for fatigue, contain localized charges intrinsically or via defects, and present problems for device reproducibility and scaling, an alternative approach using a monodomain magnetoelectric state with single-step switching is desirable. Here we demonstrate room temperature, deterministic and robust, exchange coupling between monodomain BiFeO3 films and Co overlayer that is intrinsic (i.e., not dependent on domain walls). Direct coupling between BiFeO3 antiferromagnetic order and Co magnetization is observed, with similar to 90 degrees in-plane Co moment rotation upon single-step switching that is reproducible for hundreds of cycles. 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B.},\nTitle = {{Deterministic and robust room-temperature exchange coupling in\n monodomain multiferroic BiFeO3 heterostructures}},\nJournal = {{NATURE COMMUNICATIONS}},\nYear = {{2017}},\nVolume = {{8}},\nMonth = {{NOV 17}},\nAbstract = {{Exploiting multiferroic BiFeO3 thin films in spintronic devices requires\n deterministic and robust control of both internal magnetoelectric\n coupling in BiFeO3, as well as exchange coupling of its\n antiferromagnetic order to a ferromagnetic overlayer. Previous reports\n utilized approaches based on multi-step ferroelectric switching with\n multiple ferroelectric domains. Because domain walls can be responsible\n for fatigue, contain localized charges intrinsically or via defects, and\n present problems for device reproducibility and scaling, an alternative\n approach using a monodomain magnetoelectric state with single-step\n switching is desirable. Here we demonstrate room temperature,\n deterministic and robust, exchange coupling between monodomain BiFeO3\n films and Co overlayer that is intrinsic (i.e., not dependent on domain\n walls). Direct coupling between BiFeO3 antiferromagnetic order and Co\n magnetization is observed, with similar to 90 degrees in-plane Co moment\n rotation upon single-step switching that is reproducible for hundreds of\n cycles. 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