Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications. Safranski, C., Hu, G., Sun, J. Z., Hashemi, P., Brown, S. L., Buzi, L., D’Emic, C. P., Edwards, E. R. J., Galligan, E., Gottwald, M. G., Gunawan, O., Karimeddiny, S., Jung, H., Kim, J., Latzko, K., Trouilloud, P. L., & Worledge, D. C. IEEE Transactions on Electron Devices, 69(12):7180–7183, December, 2022. Conference Name: IEEE Transactions on Electron Devices![Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex We demonstrate reliable sub-nanosecond switching in two-terminal spin transfer torque magnetoresistive random access memory (STT-MRAM) devices by using double spin-magnetic tunnel junctions (DS-MTJs). A write-error-rate (WER) of 1E -6 was achieved in 194 devices with 250-ps write pulses and tight distributions. The WER = 1E -6 was also demonstrated over a temperature range of −40 °C–85 °C in a single device with 225-ps write pulses. No degradation was observed after 1E10 write cycles in selected single devices, written with 250-ps write pulses. We compare the DS-MTJ device switching performance with the published results from the state-of-the-art three-terminal spin–orbit torque (SOT) MRAM devices and show a 10\times reduction in switching current density ( J_\text c ) and 3– 10\times reduction in power consumption for devices with similar energy barriers ( E_\text b ).
@article{safranski_reliable_2022,
title = {Reliable {Sub}-{Nanosecond} {Switching} in {Magnetic} {Tunnel} {Junctions} for {MRAM} {Applications}},
volume = {69},
issn = {1557-9646},
url = {https://ieeexplore.ieee.org/abstract/document/9931332},
doi = {10.1109/TED.2022.3214168},
abstract = {We demonstrate reliable sub-nanosecond switching in two-terminal spin transfer torque magnetoresistive random access memory (STT-MRAM) devices by using double spin-magnetic tunnel junctions (DS-MTJs). A write-error-rate (WER) of 1E -6 was achieved in 194 devices with 250-ps write pulses and tight distributions. The WER = 1E -6 was also demonstrated over a temperature range of −40 °C–85 °C in a single device with 225-ps write pulses. No degradation was observed after 1E10 write cycles in selected single devices, written with 250-ps write pulses. We compare the DS-MTJ device switching performance with the published results from the state-of-the-art three-terminal spin–orbit torque (SOT) MRAM devices and show a 10{\textbackslash}times reduction in switching current density ( J\_{\textbackslash}text c ) and 3– 10{\textbackslash}times reduction in power consumption for devices with similar energy barriers ( E\_{\textbackslash}text b ).},
number = {12},
urldate = {2024-04-30},
journal = {IEEE Transactions on Electron Devices},
author = {Safranski, Christopher and Hu, Guohan and Sun, Jonathan Z. and Hashemi, Pouya and Brown, Stephen L. and Buzi, Luxherta and D’Emic, Christopher P. and Edwards, Eric R. J. and Galligan, Eileen and Gottwald, Matthias G. and Gunawan, Oki and Karimeddiny, Saba and Jung, Hyunsung and Kim, Juhyun and Latzko, Ken and Trouilloud, Philip L. and Worledge, Daniel C.},
month = dec,
year = {2022},
note = {Conference Name: IEEE Transactions on Electron Devices},
keywords = {Current density, Electrical resistance measurement, Magnetic memory, Magnetic tunneling, Pulse measurements, Switches, Temperature measurement, Torque, magnetic tunnel junctions (MTJs), magnetics, spintronics},
pages = {7180--7183},
}
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