Quantum Memristors with Superconducting Circuits. Salmilehto, J., Deppe, F., Di Ventra, M., Sanz, M., & Solano, E. Scientific Reports, 7:42044, February, 2017.
Quantum Memristors with Superconducting Circuits [link]Paper  doi  abstract   bibtex   
Memristors are resistive elements retaining information of their past dynamics. They have garnered substantial interest due to their potential for representing a paradigm change in electronics, information processing and unconventional computing. Given the advent of quantum technologies, a design for a quantum memristor with superconducting circuits may be envisaged. Along these lines, we introduce such a quantum device whose memristive behavior arises from quasiparticle-induced tunneling when supercurrents are cancelled. For realistic parameters, we find that the relevant hysteretic behavior may be observed using current state-of-the-art measurements of the phase-driven tunneling current. Finally, we develop suitable methods to quantify memory retention in the system.
@article{salmilehto_quantum_2017,
	title = {Quantum {Memristors} with {Superconducting} {Circuits}},
	volume = {7},
	copyright = {2017 Nature Publishing Group},
	issn = {2045-2322},
	url = {https://www.nature.com/articles/srep42044},
	doi = {10.1038/srep42044},
	abstract = {Memristors are resistive elements retaining information of their past dynamics. They have garnered substantial interest due to their potential for representing a paradigm change in electronics, information processing and unconventional computing. Given the advent of quantum technologies, a design for a quantum memristor with superconducting circuits may be envisaged. Along these lines, we introduce such a quantum device whose memristive behavior arises from quasiparticle-induced tunneling when supercurrents are cancelled. For realistic parameters, we find that the relevant hysteretic behavior may be observed using current state-of-the-art measurements of the phase-driven tunneling current. Finally, we develop suitable methods to quantify memory retention in the system.},
	language = {en},
	urldate = {2019-07-22},
	journal = {Scientific Reports},
	author = {Salmilehto, J. and Deppe, F. and Di Ventra, M. and Sanz, M. and Solano, E.},
	month = feb,
	year = {2017},
	pages = {42044}
}

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