Fabrication of genuine single-quantum-dot light-emitting diodes

Fabrication of genuine single-quantum-dot light-emitting diodes. Schmidt, R., Scholz, U., Vitzethum, M., Fix, R., Metzner, C., Kailuweit, P., Reuter, D., Wieck, A., Hübner, M., C., Stufler, S., Zrenner, a., Malzer, S., Döhler, G., H., Hübner, M., C., Stufler, S., Zrenner, a., Malzer, S., Döhler, G., H., Hübner, M., C., Stufler, S., Zrenner, a., Malzer, S., & Döhler, G., H. Applied Physics Letters, 88(12):121115, AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA, 3, 2006.

Paper abstract bibtex

We present a simple approach for the fabrication of genuine single quantum-dot light-emitting diodes. A submicron wide bottom contact stripe is formed by focused ion beam implantation doping into a GaAs buffer layer. Successive overgrowth with a thin intrinsic layer incorporating self-assembled InAs quantum dots, followed by a top contact layer of complementary doping type and standard photolithographic processing, allows for electrical cross sections in the sub-mu m(2) range. In devices with sufficiently low dot densities, only one single dot is expected to be electrically addressed. Both the observed current versus voltage characteristics and the evolution of the electroluminescence spectra as a function of applied voltage clearly demonstrate that this goal has been achieved.

@article{
 title = {Fabrication of genuine single-quantum-dot light-emitting diodes},
 type = {article},
 year = {2006},
 identifiers = {[object Object]},
 keywords = {SPECTROSCOPY},
 pages = {121115},
 volume = {88},
 websites = {http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=MarkedList&qid=43&SID=Z1OGpElceNqYaqF1F8M&page=1&doc=13&colName=WOS,http://scitation.aip.org/content/aip/journal/apl/88/12/10.1063/1.2188057},
 month = {3},
 publisher = {AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA},
 day = {23},
 id = {02600b49-e1c3-38fc-849e-1dc7f7341f18},
 created = {2015-11-13T09:09:41.000Z},
 accessed = {2015-04-16},
 file_attached = {true},
 profile_id = {0008bd32-cc48-367e-9373-34b85c7e7451},
 last_modified = {2015-11-13T09:09:43.000Z},
 read = {false},
 starred = {false},
 authored = {true},
 confirmed = {true},
 hidden = {false},
 citation_key = {Schmidt2006},
 abstract = {We present a simple approach for the fabrication of genuine single quantum-dot light-emitting diodes. A submicron wide bottom contact stripe is formed by focused ion beam implantation doping into a GaAs buffer layer. Successive overgrowth with a thin intrinsic layer incorporating self-assembled InAs quantum dots, followed by a top contact layer of complementary doping type and standard photolithographic processing, allows for electrical cross sections in the sub-mu m(2) range. In devices with sufficiently low dot densities, only one single dot is expected to be electrically addressed. Both the observed current versus voltage characteristics and the evolution of the electroluminescence spectra as a function of applied voltage clearly demonstrate that this goal has been achieved.},
 bibtype = {article},
 author = {Schmidt, R. and Scholz, U. and Vitzethum, M. and Fix, R. and Metzner, C. and Kailuweit, P. and Reuter, D. and Wieck, A. and Hübner, M. C. and Stufler, S. and Zrenner, a. and Malzer, S. and Döhler, G. H. and Hübner, M. C. and Stufler, S. and Zrenner, a. and Malzer, S. and Döhler, G. H. and Hübner, M. C. and Stufler, S. and Zrenner, a. and Malzer, S. and Döhler, G. H.},
 journal = {Applied Physics Letters},
 number = {12}
}

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{"_id":"mZCsAq4zduZHXXqCZ","bibbaseid":"schmidt-scholz-vitzethum-fix-metzner-kailuweit-reuter-wieck-hubner-stufler-zrenner-malzer-dohler-hbner-stufler-zrenner-malzer-dhler-hubner-stufler-zrenner-malzer-dohler-fabricationofgenuinesinglequantumdotlightemittingdiodes-2006","downloads":0,"creationDate":"2015-11-13T14:26:51.420Z","title":"Fabrication of genuine single-quantum-dot light-emitting diodes","author_short":["Schmidt, R.","Scholz, U.","Vitzethum, M.","Fix, R.","Metzner, C.","Kailuweit, P.","Reuter, D.","Wieck, A.","Hübner, M., C.","Stufler, S.","Zrenner, a.","Malzer, S.","Döhler, G., H.","Hübner, M., C.","Stufler, S.","Zrenner, a.","Malzer, S.","Döhler, G., H.","Hübner, M., C.","Stufler, S.","Zrenner, a.","Malzer, S.","Döhler, G., H."],"year":2006,"bibtype":"article","biburl":null,"bibdata":{"title":"Fabrication of genuine single-quantum-dot light-emitting diodes","type":"article","year":"2006","identifiers":"[object Object]","keywords":"SPECTROSCOPY","pages":"121115","volume":"88","websites":"http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=MarkedList&qid=43&SID=Z1OGpElceNqYaqF1F8M&page=1&doc=13&colName=WOS,http://scitation.aip.org/content/aip/journal/apl/88/12/10.1063/1.2188057","month":"3","publisher":"AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA","day":"23","id":"02600b49-e1c3-38fc-849e-1dc7f7341f18","created":"2015-11-13T09:09:41.000Z","accessed":"2015-04-16","file_attached":"true","profile_id":"0008bd32-cc48-367e-9373-34b85c7e7451","last_modified":"2015-11-13T09:09:43.000Z","read":false,"starred":false,"authored":"true","confirmed":"true","hidden":false,"citation_key":"Schmidt2006","abstract":"We present a simple approach for the fabrication of genuine single quantum-dot light-emitting diodes. A submicron wide bottom contact stripe is formed by focused ion beam implantation doping into a GaAs buffer layer. Successive overgrowth with a thin intrinsic layer incorporating self-assembled InAs quantum dots, followed by a top contact layer of complementary doping type and standard photolithographic processing, allows for electrical cross sections in the sub-mu m(2) range. In devices with sufficiently low dot densities, only one single dot is expected to be electrically addressed. Both the observed current versus voltage characteristics and the evolution of the electroluminescence spectra as a function of applied voltage clearly demonstrate that this goal has been achieved.","bibtype":"article","author":"Schmidt, R. and Scholz, U. and Vitzethum, M. and Fix, R. and Metzner, C. and Kailuweit, P. and Reuter, D. and Wieck, A. and Hübner, M. C. and Stufler, S. and Zrenner, a. and Malzer, S. and Döhler, G. H. and Hübner, M. C. and Stufler, S. and Zrenner, a. and Malzer, S. and Döhler, G. H. and Hübner, M. C. and Stufler, S. and Zrenner, a. and Malzer, S. and Döhler, G. H.","journal":"Applied Physics Letters","number":"12","bibtex":"@article{\n title = {Fabrication of genuine single-quantum-dot light-emitting diodes},\n type = {article},\n year = {2006},\n identifiers = {[object Object]},\n keywords = {SPECTROSCOPY},\n pages = {121115},\n volume = {88},\n websites = {http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=MarkedList&qid=43&SID=Z1OGpElceNqYaqF1F8M&page=1&doc=13&colName=WOS,http://scitation.aip.org/content/aip/journal/apl/88/12/10.1063/1.2188057},\n month = {3},\n publisher = {AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA},\n day = {23},\n id = {02600b49-e1c3-38fc-849e-1dc7f7341f18},\n created = {2015-11-13T09:09:41.000Z},\n accessed = {2015-04-16},\n file_attached = {true},\n profile_id = {0008bd32-cc48-367e-9373-34b85c7e7451},\n last_modified = {2015-11-13T09:09:43.000Z},\n read = {false},\n starred = {false},\n authored = {true},\n confirmed = {true},\n hidden = {false},\n citation_key = {Schmidt2006},\n abstract = {We present a simple approach for the fabrication of genuine single quantum-dot light-emitting diodes. A submicron wide bottom contact stripe is formed by focused ion beam implantation doping into a GaAs buffer layer. Successive overgrowth with a thin intrinsic layer incorporating self-assembled InAs quantum dots, followed by a top contact layer of complementary doping type and standard photolithographic processing, allows for electrical cross sections in the sub-mu m(2) range. In devices with sufficiently low dot densities, only one single dot is expected to be electrically addressed. Both the observed current versus voltage characteristics and the evolution of the electroluminescence spectra as a function of applied voltage clearly demonstrate that this goal has been achieved.},\n bibtype = {article},\n author = {Schmidt, R. and Scholz, U. and Vitzethum, M. and Fix, R. and Metzner, C. and Kailuweit, P. and Reuter, D. and Wieck, A. and Hübner, M. C. and Stufler, S. and Zrenner, a. and Malzer, S. and Döhler, G. H. and Hübner, M. C. and Stufler, S. and Zrenner, a. and Malzer, S. and Döhler, G. H. and Hübner, M. C. and Stufler, S. and Zrenner, a. and Malzer, S. and Döhler, G. H.},\n journal = {Applied Physics Letters},\n number = {12}\n}","author_short":["Schmidt, R.","Scholz, U.","Vitzethum, M.","Fix, R.","Metzner, C.","Kailuweit, P.","Reuter, D.","Wieck, A.","Hübner, M., C.","Stufler, S.","Zrenner, a.","Malzer, S.","Döhler, G., H.","Hübner, M., C.","Stufler, S.","Zrenner, a.","Malzer, S.","Döhler, G., H.","Hübner, M., C.","Stufler, S.","Zrenner, a.","Malzer, S.","Döhler, G., H."],"urls":{"Paper":"http://bibbase.org/service/mendeley/0008bd32-cc48-367e-9373-34b85c7e7451/file/7e534cbb-c083-b760-1f4d-d5e68ca71e37/2006-Fabrication_of_genuine_single-quantum-dot_light-emitting_diodes.pdf.pdf"},"bibbaseid":"schmidt-scholz-vitzethum-fix-metzner-kailuweit-reuter-wieck-hubner-stufler-zrenner-malzer-dohler-hbner-stufler-zrenner-malzer-dhler-hubner-stufler-zrenner-malzer-dohler-fabricationofgenuinesinglequantumdotlightemittingdiodes-2006","role":"author","keyword":["SPECTROSCOPY"],"downloads":0},"search_terms":["fabrication","genuine","single","quantum","dot","light","emitting","diodes","schmidt","scholz","vitzethum","fix","metzner","kailuweit","reuter","wieck","hübner","stufler","zrenner","malzer","döhler","hübner","stufler","zrenner","malzer","döhler","hübner","stufler","zrenner","malzer","döhler"],"keywords":["spectroscopy"],"authorIDs":["5645997df9e8212b2d0000b9"]}