Computation of Self-Induced Magnetic Field Effects Including the Lorentz Force for Fast-Transient Phenomena in Integrated-Circuit Devices. Schoenmaker, W., Chen, Q., & Galy, P. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 33(6):893–902, IEEE, June, 2014.
doi  abstract   bibtex   
We present a full physical simulation picture of the electromagnetic phenomena combining electromagnetic (EM) fields and carrier transport in semiconductor devices (TCAD) in the transient regime. The simulation tool computes the EM fields in a self-consistent way and the resulting magnetic fields are incorporated in the computation of the current sources that get modified by the Lorentz force (LF).
@Article{         Schoenmaker_2014aa,
  abstract      = {We present a full physical simulation picture of the electromagnetic phenomena combining electromagnetic (EM) fields and carrier transport in semiconductor devices (TCAD) in the transient regime. The simulation tool computes the EM fields in a self-consistent way and the resulting magnetic fields are incorporated in the computation of the current sources that get modified by the Lorentz force (LF).},
  author        = {Schoenmaker, Wim and Chen, Quan and Galy, P.},
  doi           = {10.1109/TCAD.2014.2303050},
  file          = {Schoenmaker_2014aa.pdf},
  issn          = {0278-0070},
  journal       = {IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems},
  keywords      = {lorentz,semiconductor,maxwell},
  langid        = {english},
  month         = jun,
  number        = {6},
  pages         = {893--902},
  publisher     = {IEEE},
  title         = {Computation of Self-Induced Magnetic Field Effects Including the {Lorentz} Force for Fast-Transient Phenomena in Integrated-Circuit Devices},
  volume        = {33},
  year          = {2014},
  shortjournal  = {IEEE Trans. Comput. Aided. Des. Integrated Circ. Syst.}
}

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