Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures. Schröder, T., Trusheim, M. E., Walsh, M., Li, L., Zheng, J., Schukraft, M., Sipahigil, A., Evans, R. E., Sukachev, D. D., Nguyen, C. T., Pacheco, J. L., Camacho, R. M., Bielejec, E. S., Lukin, M. D., & Englund, D. Nature Communications, 8(1):15376, May, 2017. Number: 1 Publisher: Nature Publishing Group![Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex The controlled creation of defect centre—nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ∼32 nm lateral precision and \textless50 nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be ∼2.5% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ∼51 GHz and close to lifetime-limited single-emitter transition linewidths down to 126±13 MHz corresponding to ∼1.4 times the natural linewidth. This method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors.
@article{schroder_scalable_2017-1,
title = {Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures},
volume = {8},
copyright = {2017 The Author(s)},
issn = {2041-1723},
url = {https://www.nature.com/articles/ncomms15376},
doi = {10.1038/ncomms15376},
abstract = {The controlled creation of defect centre—nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with ∼32 nm lateral precision and {\textless}50 nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be ∼2.5\% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ∼51 GHz and close to lifetime-limited single-emitter transition linewidths down to 126±13 MHz corresponding to ∼1.4 times the natural linewidth. This method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors.},
language = {en},
number = {1},
urldate = {2022-08-03},
journal = {Nature Communications},
author = {Schröder, Tim and Trusheim, Matthew E. and Walsh, Michael and Li, Luozhou and Zheng, Jiabao and Schukraft, Marco and Sipahigil, Alp and Evans, Ruffin E. and Sukachev, Denis D. and Nguyen, Christian T. and Pacheco, Jose L. and Camacho, Ryan M. and Bielejec, Edward S. and Lukin, Mikhail D. and Englund, Dirk},
month = may,
year = {2017},
note = {Number: 1
Publisher: Nature Publishing Group},
keywords = {Optical properties of diamond, Photonic crystals, Quantum information},
pages = {15376},
}
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Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of ∼51 GHz and close to lifetime-limited single-emitter transition linewidths down to 126±13 MHz corresponding to ∼1.4 times the natural linewidth. 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