Quantum effects of potential fluctuations in GaAs δ-doping superlattices. Schrüfer, K.; Metzner, C.; Wieser, U.; Kneissl, M.; and Döhler, G. Superlattices and Microstructures, 15(4):413, ACADEMIC PRESS (LONDON) LTD, 24-28 OVAL RD, LONDON, ENGLAND NW1 7DX, 6, 1994.
Quantum effects of potential fluctuations in GaAs δ-doping superlattices [pdf]Paper  Quantum effects of potential fluctuations in GaAs δ-doping superlattices [link]Website  abstract   bibtex   
The electronic and optical properties of delta-doping n-i-p-i superlattices are strongly influenced by the random distribution of donors and accepters within the doping layers. A Monte-Carlo method is applied to investigate the resulting potential fluctuations and local changes of energy levels and wavefunctions. We study disorder effects on the density of states, the capacitance and the intraband absorption coefficient as a function of excitation level. In addition, the luminescence spectra are calculated and compared to electroluminescence measurements. Excellent agreement is achieved without using any fitting parameters, if the local wavefunction shrinkage of the tail states is included. While contributions of different subbands cannot be resolved in the luminescence, the simulation of conduction band (CB) intraband absorption confirms that this is possible using resonant Raman scattering.
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 title = {Quantum effects of potential fluctuations in GaAs δ-doping superlattices},
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 year = {1994},
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 keywords = {EXCITATIONS,SCATTERING,SUPER-LATTICES},
 pages = {413},
 volume = {15},
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 month = {6},
 publisher = {ACADEMIC PRESS (LONDON) LTD, 24-28 OVAL RD, LONDON, ENGLAND NW1 7DX},
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 abstract = {The electronic and optical properties of delta-doping n-i-p-i superlattices are strongly influenced by the random distribution of donors and accepters within the doping layers. A Monte-Carlo method is applied to investigate the resulting potential fluctuations and local changes of energy levels and wavefunctions. We study disorder effects on the density of states, the capacitance and the intraband absorption coefficient as a function of excitation level. In addition, the luminescence spectra are calculated and compared to electroluminescence measurements. Excellent agreement is achieved without using any fitting parameters, if the local wavefunction shrinkage of the tail states is included. While contributions of different subbands cannot be resolved in the luminescence, the simulation of conduction band (CB) intraband absorption confirms that this is possible using resonant Raman scattering.},
 bibtype = {article},
 author = {Schrüfer, K. and Metzner, C. and Wieser, U. and Kneissl, M. and Döhler, G.H.},
 journal = {Superlattices and Microstructures},
 number = {4}
}
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