Very High Sustainable Forward Current Densities on 4H-SiC pn Junctions formed by VLS localized epitaxy of heavily Al-doped p++ emitters. Sejil, S., Lalouat, L., Lazar, M., Carole, D., Brylinski, C., Jomard, F., Planson, D., Ferro, G., & Raynaud, C. In Materials Science Forum, volume 897, pages 63–66, 2017. Trans Tech Publ.
Very High Sustainable Forward Current Densities on 4H-SiC pn Junctions formed by VLS localized epitaxy of heavily Al-doped p++ emitters [link]Paper  doi  bibtex   
@inproceedings{sejil_2017_msf.897.63,
  author = {S. Sejil and L. Lalouat and M. Lazar and D. Carole and C. Brylinski and F. Jomard and D. Planson and G. Ferro and C. Raynaud},
  booktitle = {Materials Science Forum},
  doi = {10.4028/www.scientific.net/MSF.897.63},
  organization = {Trans Tech Publ},
  pages = {63--66},
  title = {Very High Sustainable Forward Current Densities on 4H-SiC pn Junctions formed by VLS localized epitaxy of heavily Al-doped p++ emitters},
  volume = {897},
  year = {2017},
  number = {},
  journal = {},
  url = {},
}

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