Origin of the emergence of higher T-c than bulk in iron chalcogenide thin films. Seo, S., Kang, J., Oh, M. J., Jeong, I., Jiang, J., Gu, G., Lee, J., Lee, J., Noh, H., Liu, M., Gao, P., Hellstrom, E. E., Lee, J., Jo, Y. J., Eom, C., & Lee, S. SCIENTIFIC REPORTS, AUG 30, 2017.
doi  abstract   bibtex   
Fabrication of epitaxial FeSexTe1-x thin films using pulsed laser deposition (PLD) enables improving their superconducting transition temperature (T-c) by more than similar to 40% than their bulk T-c. Intriguingly, T-c enhancement in FeSexTe1-x thin films has been observed on various substrates and with different Se content, x. To date, various mechanisms for T-c enhancement have been reported, but they remain controversial in universally explaining the T-c improvement in the FeSexTe1-x films. In this report, we demonstrate that the controversies over the mechanism of T-c enhancement are due to the abnormal changes in the chalcogen ratio (Se:Te) during the film growth and that the previously reported T-c enhancement in FeSe0.5Te0.5 thin films is caused by a remarkable increase of Se content. Although our FeSexTe1-x thin films were fabricated via PLD using a Fe0.94Se0.45Te0.55 target, the precisely measured composition indicates a Se-rich FeSexTe1-x (0.6 < x < 0.8) as ascertained through accurate compositional analysis by both wavelength dispersive spectroscopy (WDS) and Rutherford backscattering spectrometry (RBS). We suggest that the origin of the abnormal composition change is the difference in the thermodynamic properties of ternary FeSexTe1-x, based on first principle calculations.
@article{ ISI:000408622400088,
Author = {Seo, Sehun and Kang, Jong-Hoon and Oh, Myeong Jun and Jeong, Il-Seok and
   Jiang, Jianyi and Gu, Genda and Lee, Jung-Woo and Lee, Jongmin and Noh,
   Heesung and Liu, Mengchao and Gao, Peng and Hellstrom, Eric E. and Lee,
   Joo-Hyoung and Jo, Youn Jung and Eom, Chang-Beom and Lee, Sanghan},
Title = {{Origin of the emergence of higher T-c than bulk in iron chalcogenide
   thin films}},
Journal = {{SCIENTIFIC REPORTS}},
Year = {{2017}},
Volume = {{7}},
Month = {{AUG 30}},
Abstract = {{Fabrication of epitaxial FeSexTe1-x thin films using pulsed laser
   deposition (PLD) enables improving their superconducting transition
   temperature (T-c) by more than similar to 40\% than their bulk T-c.
   Intriguingly, T-c enhancement in FeSexTe1-x thin films has been observed
   on various substrates and with different Se content, x. To date, various
   mechanisms for T-c enhancement have been reported, but they remain
   controversial in universally explaining the T-c improvement in the
   FeSexTe1-x films. In this report, we demonstrate that the controversies
   over the mechanism of T-c enhancement are due to the abnormal changes in
   the chalcogen ratio (Se:Te) during the film growth and that the
   previously reported T-c enhancement in FeSe0.5Te0.5 thin films is caused
   by a remarkable increase of Se content. Although our FeSexTe1-x thin
   films were fabricated via PLD using a Fe0.94Se0.45Te0.55 target, the
   precisely measured composition indicates a Se-rich FeSexTe1-x (0.6 < x <
   0.8) as ascertained through accurate compositional analysis by both
   wavelength dispersive spectroscopy (WDS) and Rutherford backscattering
   spectrometry (RBS). We suggest that the origin of the abnormal
   composition change is the difference in the thermodynamic properties of
   ternary FeSexTe1-x, based on first principle calculations.}},
DOI = {{10.1038/s41598-017-10383-1}},
Article-Number = {{9994}},
ISSN = {{2045-2322}},
ResearcherID-Numbers = {{Jiang, Jianyi/F-2549-2017
   Lee, Sanghan/C-8876-2012
   Gao, Peng/B-4675-2012
   Eom, Chang-Beom/I-5567-2014
   }},
ORCID-Numbers = {{Jiang, Jianyi/0000-0002-1094-2013
   Lee, Sanghan/0000-0002-5807-864X
   Oh, Myeong Jun/0000-0002-5021-9233}},
Unique-ID = {{ISI:000408622400088}},
}

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