Asymmetric Error Rates of Cell States Exploration for Performance Improvement on Flash Memory Based Storage Systems. Sha, E. H., Gao, C., Shi, L., Wu, K., Zhao, M., & Xue, C. J. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 36(8):1340–1352, 2017.
Asymmetric Error Rates of Cell States Exploration for Performance Improvement on Flash Memory Based Storage Systems [link]Paper  doi  bibtex   
@article{DBLP:journals/tcad/ShaGSWZX17,
  author       = {Edwin Hsing{-}Mean Sha and
                  Congming Gao and
                  Liang Shi and
                  Kaijie Wu and
                  Mengying Zhao and
                  Chun Jason Xue},
  title        = {Asymmetric Error Rates of Cell States Exploration for Performance
                  Improvement on Flash Memory Based Storage Systems},
  journal      = {{IEEE} Trans. Comput. Aided Des. Integr. Circuits Syst.},
  volume       = {36},
  number       = {8},
  pages        = {1340--1352},
  year         = {2017},
  url          = {https://doi.org/10.1109/TCAD.2016.2626446},
  doi          = {10.1109/TCAD.2016.2626446},
  timestamp    = {Thu, 24 Sep 2020 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/journals/tcad/ShaGSWZX17.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}

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