@inproceedings{shihFastOpticsFreeExtraction2026,
  title = {Fast, {{Optics-Free Extraction}} of {{Interface Trap}} and {{Subgap DOS}} in {{Amorphous Oxide TFTs Using Single Pulse Charge Pumping}}},
  booktitle = {2026 {{IEEE International Reliability Physics Symposium}} ({{IRPS}})},
  author = {Shih, Chun-An and Islam, Mir Md Fahimul and Niu, Chang and Jang, Hyeongjun and Lee, Sumi and Huh, In and Jeong, Changwook and Ye, Peide D. and Alam, Muhammad A.},
  year = 2026,
  month = mar,
  pages = {1--6},
  issn = {1938-1891},
  doi = {10.1109/IRPS61424.2026.11499244},
  urldate = {2026-05-14},
  abstract = {Next-generation ultra-thin floating body (Si/Oxide/MoS.) transistors inherently contain a significant number of interface and bulk defects that alter device performance/reliability. Recent studies show that sub-bandgap (SBG) states cause subthreshold swing (S S) saturation at cryogenic temperatures, impacting cryogenic applications in aerospace electronics and quantum computing. In this work, we present a fast, optics-free methodology using single pulse charge pumping (SPCP) to extract interface trap density (N\_\textbackslash text it ) and SBG density of states (DOS) in ALD-grown ultrathin amorphous-oxide TFTs. First, we validate the high stability and repeatability of SPCP by multi-pulse charge pumping (MPCP). Second, we embed the SPCP-extracted N\_\textbackslash text it into a physics-based PBTI model, improving the threshold voltage shift (\textbackslash Delta V\_\textbackslash text th ) predictions. Finally, we reconstruct SBG-DOS using an SPCP-based extraction framework with hybrid density functional theory (DFT) calculation. We show that post-annealing reduces SBG-DOS in both \textbackslash textIn\_2 \textbackslash mathrmO\_3 and IGZO, and the SBG-DOS comprises band tail states and oxygen-vacancy-related deep states (\textbackslash textVo\textasciicircum 2+ and \textbackslash textVo\textasciicircum 0). Overall, our work demonstrates that the SPCP framework enables rapid and reliable N\_\textbackslash textit / DOS metrology for next-generation transistors.},
  keywords = {Aerospace electronics,Charge pumping (CP),Charge pumps,Circuits,Circuits and systems,Contacts,Density functional theory (DFT) calculation,Diodes,Frequency modulation,Integrated circuits,Light emitting diodes,Oxide transistor,Radio broadcasting,Single pulse charge pumping (SPCP),Sub-bandgap density of states}
}

{"_id":"hiuzBQvy29eP5HK3v","bibbaseid":"shih-islam-niu-jang-lee-huh-jeong-ye-etal-fastopticsfreeextractionofinterfacetrapandsubgapdosinamorphousoxidetftsusingsinglepulsechargepumping-2026","author_short":["Shih, C.","Islam, M. M. F.","Niu, C.","Jang, H.","Lee, S.","Huh, I.","Jeong, C.","Ye, P. D.","Alam, M. A."],"bibdata":{"bibtype":"inproceedings","type":"inproceedings","title":"Fast, Optics-Free Extraction of Interface Trap and Subgap DOS in Amorphous Oxide TFTs Using Single Pulse Charge Pumping","booktitle":"2026 IEEE International Reliability Physics Symposium (IRPS)","author":[{"propositions":[],"lastnames":["Shih"],"firstnames":["Chun-An"],"suffixes":[]},{"propositions":[],"lastnames":["Islam"],"firstnames":["Mir","Md","Fahimul"],"suffixes":[]},{"propositions":[],"lastnames":["Niu"],"firstnames":["Chang"],"suffixes":[]},{"propositions":[],"lastnames":["Jang"],"firstnames":["Hyeongjun"],"suffixes":[]},{"propositions":[],"lastnames":["Lee"],"firstnames":["Sumi"],"suffixes":[]},{"propositions":[],"lastnames":["Huh"],"firstnames":["In"],"suffixes":[]},{"propositions":[],"lastnames":["Jeong"],"firstnames":["Changwook"],"suffixes":[]},{"propositions":[],"lastnames":["Ye"],"firstnames":["Peide","D."],"suffixes":[]},{"propositions":[],"lastnames":["Alam"],"firstnames":["Muhammad","A."],"suffixes":[]}],"year":"2026","month":"March","pages":"1–6","issn":"1938-1891","doi":"10.1109/IRPS61424.2026.11499244","urldate":"2026-05-14","abstract":"Next-generation ultra-thin floating body (Si/Oxide/MoS.) transistors inherently contain a significant number of interface and bulk defects that alter device performance/reliability. Recent studies show that sub-bandgap (SBG) states cause subthreshold swing (S S) saturation at cryogenic temperatures, impacting cryogenic applications in aerospace electronics and quantum computing. In this work, we present a fast, optics-free methodology using single pulse charge pumping (SPCP) to extract interface trap density (N_\\ text it ) and SBG density of states (DOS) in ALD-grown ultrathin amorphous-oxide TFTs. First, we validate the high stability and repeatability of SPCP by multi-pulse charge pumping (MPCP). Second, we embed the SPCP-extracted N_\\ text it into a physics-based PBTI model, improving the threshold voltage shift (\\ Delta V_\\ text th ) predictions. Finally, we reconstruct SBG-DOS using an SPCP-based extraction framework with hybrid density functional theory (DFT) calculation. We show that post-annealing reduces SBG-DOS in both \\ textIn_2 \\ mathrmO_3 and IGZO, and the SBG-DOS comprises band tail states and oxygen-vacancy-related deep states (\\ textVo\\textasciicircum 2+ and \\ textVo\\textasciicircum 0). Overall, our work demonstrates that the SPCP framework enables rapid and reliable N_\\ textit / DOS metrology for next-generation transistors.","keywords":"Aerospace electronics,Charge pumping (CP),Charge pumps,Circuits,Circuits and systems,Contacts,Density functional theory (DFT) calculation,Diodes,Frequency modulation,Integrated circuits,Light emitting diodes,Oxide transistor,Radio broadcasting,Single pulse charge pumping (SPCP),Sub-bandgap density of states","bibtex":"@inproceedings{shihFastOpticsFreeExtraction2026,\n title = {Fast, {{Optics-Free Extraction}} of {{Interface Trap}} and {{Subgap DOS}} in {{Amorphous Oxide TFTs Using Single Pulse Charge Pumping}}},\n booktitle = {2026 {{IEEE International Reliability Physics Symposium}} ({{IRPS}})},\n author = {Shih, Chun-An and Islam, Mir Md Fahimul and Niu, Chang and Jang, Hyeongjun and Lee, Sumi and Huh, In and Jeong, Changwook and Ye, Peide D. and Alam, Muhammad A.},\n year = 2026,\n month = mar,\n pages = {1--6},\n issn = {1938-1891},\n doi = {10.1109/IRPS61424.2026.11499244},\n urldate = {2026-05-14},\n abstract = {Next-generation ultra-thin floating body (Si/Oxide/MoS.) transistors inherently contain a significant number of interface and bulk defects that alter device performance/reliability. Recent studies show that sub-bandgap (SBG) states cause subthreshold swing (S S) saturation at cryogenic temperatures, impacting cryogenic applications in aerospace electronics and quantum computing. In this work, we present a fast, optics-free methodology using single pulse charge pumping (SPCP) to extract interface trap density (N\\_\\textbackslash text it ) and SBG density of states (DOS) in ALD-grown ultrathin amorphous-oxide TFTs. First, we validate the high stability and repeatability of SPCP by multi-pulse charge pumping (MPCP). Second, we embed the SPCP-extracted N\\_\\textbackslash text it into a physics-based PBTI model, improving the threshold voltage shift (\\textbackslash Delta V\\_\\textbackslash text th ) predictions. Finally, we reconstruct SBG-DOS using an SPCP-based extraction framework with hybrid density functional theory (DFT) calculation. We show that post-annealing reduces SBG-DOS in both \\textbackslash textIn\\_2 \\textbackslash mathrmO\\_3 and IGZO, and the SBG-DOS comprises band tail states and oxygen-vacancy-related deep states (\\textbackslash textVo\\textasciicircum 2+ and \\textbackslash textVo\\textasciicircum 0). Overall, our work demonstrates that the SPCP framework enables rapid and reliable N\\_\\textbackslash textit / DOS metrology for next-generation transistors.},\n keywords = {Aerospace electronics,Charge pumping (CP),Charge pumps,Circuits,Circuits and systems,Contacts,Density functional theory (DFT) calculation,Diodes,Frequency modulation,Integrated circuits,Light emitting diodes,Oxide transistor,Radio broadcasting,Single pulse charge pumping (SPCP),Sub-bandgap density of states}\n}\n\n","author_short":["Shih, C.","Islam, M. M. F.","Niu, C.","Jang, H.","Lee, S.","Huh, I.","Jeong, C.","Ye, P. D.","Alam, M. A."],"key":"shihFastOpticsFreeExtraction2026","id":"shihFastOpticsFreeExtraction2026","bibbaseid":"shih-islam-niu-jang-lee-huh-jeong-ye-etal-fastopticsfreeextractionofinterfacetrapandsubgapdosinamorphousoxidetftsusingsinglepulsechargepumping-2026","role":"author","urls":{},"keyword":["Aerospace electronics","Charge pumping (CP)","Charge pumps","Circuits","Circuits and systems","Contacts","Density functional theory (DFT) calculation","Diodes","Frequency modulation","Integrated circuits","Light emitting diodes","Oxide transistor","Radio broadcasting","Single pulse charge pumping (SPCP)","Sub-bandgap density of states"],"metadata":{"authorlinks":{}}},"bibtype":"inproceedings","biburl":"https://raw.githubusercontent.com/Changwook-Jeong/publications-bib/main/publications.bib","dataSources":["JWm9HxNqCsw89sf38"],"keywords":["aerospace electronics","charge pumping (cp)","charge pumps","circuits","circuits and systems","contacts","density functional theory (dft) calculation","diodes","frequency modulation","integrated circuits","light emitting diodes","oxide transistor","radio broadcasting","single pulse charge pumping (spcp)","sub-bandgap density of states"],"search_terms":["fast","optics","free","extraction","interface","trap","subgap","dos","amorphous","oxide","tfts","using","single","pulse","charge","pumping","shih","islam","niu","jang","lee","huh","jeong","ye","alam"],"title":"Fast, Optics-Free Extraction of Interface Trap and Subgap DOS in Amorphous Oxide TFTs Using Single Pulse Charge Pumping","year":2026}