Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid. Shushanian, A., Iida, D., Zhuang, Z., Han, Y., & Ohkawa, K. RSC Advances, 12(8):4648–4655, February, 2022. Publisher: Royal Society of Chemistrydoi abstract bibtex We studied the wet electrochemical etching of n-GaN films in oxalic acid. The electrooxidation processes occur in a potentiostatic mode in the voltage range of 5 to 20 V. We described the formation of the porous n-GaN layer structures in several ways. Firstly, we observed the microphotographs of the cross section to characterize the nanostructure. Secondly, we examined the reaction products in a liquid phase using ICP-OES and TOC-TN methods, while vapor-phase products were examined by gas chromatography. Finally, according to the product data analysis, we demonstrate a mechanism for the electrochemical oxidation of n-GaN in oxalic acid, which involves 6 electrons.
@article{shushanian_analysis_2022,
title = {Analysis of the n-{GaN} electrochemical etching process and its mechanism in oxalic acid},
volume = {12},
issn = {20462069},
doi = {10.1039/d1ra07992a},
abstract = {We studied the wet electrochemical etching of n-GaN films in oxalic acid. The electrooxidation processes occur in a potentiostatic mode in the voltage range of 5 to 20 V. We described the formation of the porous n-GaN layer structures in several ways. Firstly, we observed the microphotographs of the cross section to characterize the nanostructure. Secondly, we examined the reaction products in a liquid phase using ICP-OES and TOC-TN methods, while vapor-phase products were examined by gas chromatography. Finally, according to the product data analysis, we demonstrate a mechanism for the electrochemical oxidation of n-GaN in oxalic acid, which involves 6 electrons.},
number = {8},
journal = {RSC Advances},
author = {Shushanian, Artem and Iida, Daisuke and Zhuang, Zhe and Han, Yu and Ohkawa, Kazuhiro},
month = feb,
year = {2022},
note = {Publisher: Royal Society of Chemistry},
pages = {4648--4655},
}
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