A 65nm 16kb SRAM with 131.5pW Leakage at 0.9V for Wireless IoT Sensor Nodes. Sk, G., Truesdell, D. S., & Calhoun, B. H. Unknown Journal, 2020.
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Paper bibtex
Paper bibtex @article{620,
author = {Gupta Sk and Daniel S. Truesdell and Benton H. Calhoun},
title = {A 65nm 16kb SRAM with 131.5pW Leakage at 0.9V for Wireless IoT Sensor Nodes},
year = {2020},
journal = {Unknown Journal},
url = {https://doi.org/10.1109/vlsicircuits18222.2020.9162772}
}Downloads: 0
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