Wafer scale graphene transfer for back end of the line device integration. Smith, A., Vaziri, S., Rodriguez, S., Östling, M., & Lemme, M. In ULIS 2014 - 2014 15th International Conference on Ultimate Integration on Silicon, 2014.
abstract   bibtex   
We report on a wafer scale fabrication of graphene based field effect transistors (GFETs) for use in future radio frequency (RF) and sensor applications. The process is also almost entirely CMOS compatible and uses a scalable graphene transfer method that can be incorporated in standard CMOS back end of the line (BEOL) process flows. Such a process can be used to integrate high speed GFET devices and graphene sensors with silicon CMOS circuits. © 2014 IEEE.
@inProceedings{
 title = {Wafer scale graphene transfer for back end of the line device integration},
 type = {inProceedings},
 year = {2014},
 identifiers = {[object Object]},
 keywords = {GFET,Moore's Law,graphene,graphene transfer,more than Moore,transistors,wafer scale},
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 abstract = {We report on a wafer scale fabrication of graphene based field effect transistors (GFETs) for use in future radio frequency (RF) and sensor applications. The process is also almost entirely CMOS compatible and uses a scalable graphene transfer method that can be incorporated in standard CMOS back end of the line (BEOL) process flows. Such a process can be used to integrate high speed GFET devices and graphene sensors with silicon CMOS circuits. © 2014 IEEE.},
 bibtype = {inProceedings},
 author = {Smith, A.D. and Vaziri, S. and Rodriguez, S. and Östling, M. and Lemme, M.C.},
 booktitle = {ULIS 2014 - 2014 15th International Conference on Ultimate Integration on Silicon}
}

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