Ultra-thin, 1.0-3.0 nm, gate oxides for high performance sub-100 nm technology. Sorsch, T., Timp, W., Baumann, F., Bogart, K., Boone, T., Donnelly, V., Green, M., Evans-Lutterodt, K., Kim, C., Moccio, S., Rosamilia, J., Sapjeta, J., Silvermann, P., Weir, B., & Timp, G. In 1998 Symposium on VLSI Technology, 1998. Digest of Technical Papers, pages 222–223, June, 1998.
doi  abstract   bibtex   
We report our assessment of the limitation imposed by the tunneling current density on the scaling of stoichiometric oxides grown by rapid thermal oxidation at 1000/spl deg/C over thicknesses ranging from 0.5-3 nm.
@inproceedings{sorsch_ultra-thin_1998,
	title = {Ultra-thin, 1.0-3.0 nm, gate oxides for high performance sub-100 nm technology},
	doi = {10.1109/VLSIT.1998.689265},
	abstract = {We report our assessment of the limitation imposed by the tunneling current density on the scaling of stoichiometric oxides grown by rapid thermal oxidation at 1000/spl deg/C over thicknesses ranging from 0.5-3 nm.},
	booktitle = {1998 {Symposium} on {VLSI} {Technology}, 1998. {Digest} of {Technical} {Papers}},
	author = {Sorsch, T. and Timp, W. and Baumann, F.H. and Bogart, K.H.A. and Boone, T. and Donnelly, V.M. and Green, M. and Evans-Lutterodt, K. and Kim, C.Y. and Moccio, S. and Rosamilia, J. and Sapjeta, J. and Silvermann, P. and Weir, B. and Timp, G.},
    author+an = {2=pi},
	month = jun,
	year = {1998},
	keywords = {1.0 to 3.0 nm, 1000 degC, current density, dielectric thin films, high performance sub-100 nm technology, Leakage current, MOSFET, MOSFET circuits, MOS technology, Optical films, oxidation, rapid thermal oxidation, rapid thermal processing, Reflectivity, Rough surfaces, SiO, stoichiometric oxides, Surface roughness, Surface treatment, Thickness measurement, Tunneling, tunneling current density, tunnelling, ultra-thin gate oxides},
	pages = {222--223},
	file = {IEEE Xplore Abstract Record:/Users/timp/Library/Application Support/Zotero/Profiles/lsaq8gr4.default/zotero/storage/3GT7AX5S/abs_all.html:text/html;IEEE Xplore Full Text PDF:/Users/timp/Library/Application Support/Zotero/Profiles/lsaq8gr4.default/zotero/storage/9WC4IVEM/Sorsch et al. - 1998 - Ultra-thin, 1.0-3.0 nm, gate oxides for high perfo.pdf:application/pdf}
}

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