Heteroepitaxial CVD growth of 3C-SiC on diamond substrate. Souliere, V., Vo-Ha, A., Carole, D., Tallaire, A., Brinza, O., Pinero, J. C., Araujo, D., & Ferro, G. In Okumura, H, Harima, H, Kimoto, T, Yoshimoto, M, Watanabe, H, Hatayama, T, Matsuura, H, Funaki, T, & ano, Y, editors, Silicon Carbide and Related Materials 2013, Pts 1 and 2, volume 778-780, pages 226+, 2014. 15th International Conference on Silicon Carbide and Related Materials (ICSCRM), Miyazaki, JAPAN, SEP 29-OCT 04, 2013 bibtex*\organization:'Japan Soc Appl Phys; Res Inst Appl Sci; Inst Elect, Informat & Commun Engineers; Inst Elect Engineers Japan; Ceram Soc Japan; Surface Sci Soc Japan; Japanese Asso Crystal Growth; Vacuum Soc Japan; MITSUBISHI ELECT CORP; Cree Inc; TOKYO ELECTRON LTD; SICC Sci & Technol Co Ltd; AIXTRON SE; Infineon Technologies; Amer Elements; Lasertec Corp; MIYAZAKI CONVENT & VISITORS BUREAU; Natl Inst Informat & Commun Technol Int; Exchange Program; Commemorat Org Japan World Exposit 70; Murata Sci Fdn; Inoue Fdn Sci; Kyoto Inst Technol Int Exchange Promot Fund; Fdn Promot Mat Sci & Technol Japan; Telecommunicat Advancement Fdn; Tateisi Sci & Technol Fdn; Panasoic Corp; Sumitomo Elect Ind Ltd; Dow Corning Corp; DENSO CORP; Toyota Motor Corp; Honda R&D Co Ltd; Hitachi Chem Co Ltd; SHOWA DENKO K K; Fuji Elect Co Ltd; TOSHIBA CORP; Hitachi Ltd; ROHM Co Ltd; SHINDENGEN ELECT MFG CO LTD; SICOXS CORP; Sumitomo Corp; SANKEN ELECT CO LTD',number:'',url:''\
doi  bibtex   
@inproceedings{souliere_2014_msf.778_780.226,
	title = {Heteroepitaxial {CVD} growth of 3C-{SiC} on diamond substrate},
	volume = {778-780},
	doi = {10.4028/www.scientific.net/MSF.778-780.226},
	booktitle = {Silicon {Carbide} and {Related} {Materials} 2013, {Pts} 1 and 2},
	author = {Souliere, V. and Vo-Ha, A. and Carole, D. and Tallaire, A. and Brinza, O. and Pinero, J. C. and Araujo, D. and Ferro, G.},
	editor = {Okumura, H and Harima, H and Kimoto, T and Yoshimoto, M and Watanabe, H and Hatayama, T and Matsuura, H and Funaki, T and {ano, Y}},
	year = {2014},
	note = {15th International Conference on Silicon Carbide and Related Materials (ICSCRM), Miyazaki, JAPAN, SEP 29-OCT 04, 2013 
bibtex*\{organization:'Japan Soc Appl Phys; Res Inst Appl Sci; Inst Elect, Informat \& Commun Engineers; Inst Elect Engineers Japan; Ceram Soc Japan; Surface Sci Soc Japan; Japanese Asso Crystal Growth; Vacuum Soc Japan; MITSUBISHI ELECT CORP; Cree Inc; TOKYO ELECTRON LTD; SICC Sci \& Technol Co Ltd; AIXTRON SE; Infineon Technologies; Amer Elements; Lasertec Corp; MIYAZAKI CONVENT \& VISITORS BUREAU; Natl Inst Informat \& Commun Technol Int; Exchange Program; Commemorat Org Japan World Exposit 70; Murata Sci Fdn; Inoue Fdn Sci; Kyoto Inst Technol Int Exchange Promot Fund; Fdn Promot Mat Sci \& Technol Japan; Telecommunicat Advancement Fdn; Tateisi Sci \& Technol Fdn; Panasoic Corp; Sumitomo Elect Ind Ltd; Dow Corning Corp; DENSO CORP; Toyota Motor Corp; Honda R\&D Co Ltd; Hitachi Chem Co Ltd; SHOWA DENKO K K; Fuji Elect Co Ltd; TOSHIBA CORP; Hitachi Ltd; ROHM Co Ltd; SHINDENGEN ELECT MFG CO LTD; SICOXS CORP; Sumitomo Corp; SANKEN ELECT CO LTD',number:'',url:''\}},
	pages = {226+}
}

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