Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness. Tahhan, M., Nedy, J., Chan, S. H., Lund, C., Li, H., Gupta, G., Keller, S., & Mishra, U. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 34(3):031303, May, 2016. ![Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex The dry etching of GaN to form deep vertical structures is a critical step in many power device processes. To accomplish this, a chlorine and argon etch is investigated in detail to satisfy several criteria simultaneously such as surface roughness, crystal damage, and etch angle. Etch depths from 2 to 3.4 μm are shown in this paper. The authors investigate the formation of etch pits and its contributing factors. In addition, a nickel hard mask process is presented, with an investigation into the causes of micromasking and a pre-etch to prevent it. The authors show the results of optimized etch conditions resulting in a 2 μm deep, 0.831 nm rms roughness etch, with a 7.6° angle from vertical and low surface damage as measured by photoluminescence.
@article{tahhan_optimization_2016,
title = {Optimization of a chlorine-based deep vertical etch of {GaN} demonstrating low damage and low roughness},
volume = {34},
issn = {0734-2101, 1520-8559},
url = {https://pubs.aip.org/jva/article/34/3/031303/595699/Optimization-of-a-chlorine-based-deep-vertical},
doi = {10.1116/1.4944054},
abstract = {The dry etching of GaN to form deep vertical structures is a critical step in many power device processes. To accomplish this, a chlorine and argon etch is investigated in detail to satisfy several criteria simultaneously such as surface roughness, crystal damage, and etch angle. Etch depths from 2 to 3.4 μm are shown in this paper. The authors investigate the formation of etch pits and its contributing factors. In addition, a nickel hard mask process is presented, with an investigation into the causes of micromasking and a pre-etch to prevent it. The authors show the results of optimized etch conditions resulting in a 2 μm deep, 0.831 nm rms roughness etch, with a 7.6° angle from vertical and low surface damage as measured by photoluminescence.},
language = {en},
number = {3},
urldate = {2024-02-26},
journal = {Journal of Vacuum Science \& Technology A: Vacuum, Surfaces, and Films},
author = {Tahhan, Maher and Nedy, Joseph and Chan, Silvia H. and Lund, Cory and Li, Haoran and Gupta, Geetak and Keller, Stacia and Mishra, Umesh},
month = may,
year = {2016},
pages = {031303},
}
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