@inproceedings{conf/essderc/TakahashiKSSO19,
  added-at = {2024-10-06T00:00:00.000+0200},
  author = {Takahashi, Tsuyoshi and Kawaguchi, Kenichi and Sato, Masaru and Suhara, Michihiko and Okamoto, Naoya},
  biburl = {https://www.bibsonomy.org/bibtex/29f5b95e75f338b4ef078baa9b4fef34d/dblp},
  booktitle = {ESSDERC},
  crossref = {conf/essderc/2019},
  ee = {https://doi.org/10.1109/ESSDERC.2019.8901802},
  interhash = {0d44bcbeed3e3df419cb955074ea787b},
  intrahash = {9f5b95e75f338b4ef078baa9b4fef34d},
  isbn = {978-1-7281-1539-9},
  keywords = {dblp},
  pages = {214-217},
  publisher = {IEEE},
  timestamp = {2024-10-07T09:08:30.000+0200},
  title = {Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power Microwaves.},
  url = {http://dblp.uni-trier.de/db/conf/essderc/essderc2019.html#TakahashiKSSO19},
  year = 2019
}

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