@inProceedings{
 title = {Device modelling for 60 GHz radio front-ends in 65 nm CMOS},
 type = {inProceedings},
 year = {2009},
 identifiers = {[object Object]},
 keywords = {60 GHz,ADS,EM simulation,LNA,Nanoscale CMOS,Spiral inductor model,mm-wave MOS model},
 id = {06e52c71-f92c-34b2-8c5a-fe2245c28582},
 created = {2017-12-04T05:34:39.178Z},
 file_attached = {false},
 profile_id = {99d7e05e-a704-3549-ada2-dfc74a2d55ec},
 last_modified = {2017-12-04T05:34:39.178Z},
 read = {false},
 starred = {false},
 authored = {true},
 confirmed = {false},
 hidden = {false},
 private_publication = {false},
 abstract = {This paper presents an electromagnetic simulation-based modelling solution for active and passive devices which targets 60 GHz front-end integrated circuits. An EM model, using existing transistor compact models as core, is developed to account for the parasitic elements due to wiring stacks. A spiral inductor lumped model, based on EM simulation S-parameter data is also derived. The models are process and layout dependent, which have been verified by the design of a low noise amplifier in a 60 GHz radio front-end. ©2009 IEEE.},
 bibtype = {inProceedings},
 author = {Tao, S. and Rodriguez, S. and Rusu, A. and Ismail, M.},
 booktitle = {2009 NORCHIP}
}

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