Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors. Tapajna, M., Kaun, S. W., Wong, M. H., Gao, F., Palacios, T., Mishra, U. K., Speck, J. S., & Kuball, M. Applied Physics Letters, November, 2011. doi abstract bibtex Early stage degradation of AlGaN/GaN high electron mobility transistors (HEMTs) with different threading dislocation densities (TDDs) submitted to off-state voltage bias stress was studied. It was found that, for the stress conditions used, HEMTs with TDD ∼1010cm-2 show pronounced degradation in terms of maximum drain current, gate-lag, and trap generation measured by drain current trapping characteristics, a slight degradation in gate leakage was observed also for HEMTs with TDD of ∼10 8cm-2, and no significant degradation for devices with TDD in the ∼107cm-2 range. The results illustrate the importance of TDD for degradation and reliability of AlGaN/GaN HEMTs. © 2011 American Institute of Physics.
@article{tapajna_influence_2011,
title = {Influence of threading dislocation density on early degradation in {AlGaN}/{GaN} high electron mobility transistors},
volume = {99},
issn = {00036951},
doi = {10.1063/1.3663573},
abstract = {Early stage degradation of AlGaN/GaN high electron mobility transistors (HEMTs) with different threading dislocation densities (TDDs) submitted to off-state voltage bias stress was studied. It was found that, for the stress conditions used, HEMTs with TDD ∼1010cm-2 show pronounced degradation in terms of maximum drain current, gate-lag, and trap generation measured by drain current trapping characteristics, a slight degradation in gate leakage was observed also for HEMTs with TDD of ∼10 8cm-2, and no significant degradation for devices with TDD in the ∼107cm-2 range. The results illustrate the importance of TDD for degradation and reliability of AlGaN/GaN HEMTs. © 2011 American Institute of Physics.},
number = {22},
journal = {Applied Physics Letters},
author = {Tapajna, M. and Kaun, S. W. and Wong, M. H. and Gao, F. and Palacios, T. and Mishra, U. K. and Speck, J. S. and Kuball, M.},
month = nov,
year = {2011},
keywords = {HEMTs},
}
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