Physical modelling of base-dopant out diffusion in Single Heterojunction Bipolar Transistors. Tauqeer, T., Sexton, J., Mohiuddin, M., Knight, R., Amir, F., & Missous, M. 2009.
Paper
Website bibtex @misc{
title = {Physical modelling of base-dopant out diffusion in Single Heterojunction Bipolar Transistors},
type = {misc},
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source = {An annual conference on all aspects of semiconductor research, UK Semiconductor 2009},
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author = {Tauqeer, T and Sexton, J and Mohiuddin, M and Knight, R and Amir, F and Missous, M}
}
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