Interfacial Reactions Between Amorphous W-Si Thin Films and Polycrystalline Overlayers. Thomas Perepezko, W. Technical Report
Interfacial Reactions Between Amorphous W-Si Thin Films and Polycrystalline Overlayers [pdf]Paper  abstract   bibtex   
Interactions between amorphous metal thin films and either a substrate or an overlayer can limit their effectiveness as diffusion barriers. We have found in previous studies that Au and Al polycrystalline thin films in contact with amorphous W-Si lowers the crystallization temperature of the a-(W-Si) by at least 100C. In contrast Cu and Mo have no apparent effect on the stability of the amorphous layer. The mechanisms leading to premature crystallization are not well understood. Amorphous W Si was deposited by D.C. sputtering .72 .28 onto single crystal Si substrates. 04verlayers of Al were then evaporated onto the W-Si. Using Auger electron spectroscopy depth profiling coupled with cross-section TEM, we have studied interfacial reactions between the amorphous layer and polycrystalline Al. Auger profiling results show that in the case of Al overlayers, W and Si diffuse out of the a-(W-Si) into the Al where WA 1 2 forms. These results can be explained in the context of three binary diffusion couples, W-Si, W-Al, Al-Si, and the individual interactions associated with these couples.
@techreport{
 title = {Interfacial Reactions Between Amorphous W-Si Thin Films and Polycrystalline Overlayers},
 type = {techreport},
 keywords = {amorphous,interfacial,overlayers,polycrystalline,reactions,si,thin films,w},
 id = {21b67411-6045-3dde-ae6d-d82ab6fca734},
 created = {2018-09-14T20:50:22.057Z},
 file_attached = {true},
 profile_id = {70644822-a92d-388e-a930-3d28afc76b1e},
 group_id = {f7d35d58-7823-3e09-9e83-2d24928a3f0e},
 last_modified = {2019-01-07T22:04:25.933Z},
 read = {false},
 starred = {false},
 authored = {false},
 confirmed = {true},
 hidden = {false},
 private_publication = {false},
 abstract = {Interactions between amorphous metal thin films and either a substrate or an overlayer can limit their effectiveness as diffusion barriers. We have found in previous studies that Au and Al polycrystalline thin films in contact with amorphous W-Si lowers the crystallization temperature of the a-(W-Si) by at least 100C. In contrast Cu and Mo have no apparent effect on the stability of the amorphous layer. The mechanisms leading to premature crystallization are not well understood. Amorphous W Si was deposited by D.C. sputtering .72 .28 onto single crystal Si substrates. 04verlayers of Al were then evaporated onto the W-Si. Using Auger electron spectroscopy depth profiling coupled with cross-section TEM, we have studied interfacial reactions between the amorphous layer and polycrystalline Al. Auger profiling results show that in the case of Al overlayers, W and Si diffuse out of the a-(W-Si) into the Al where WA 1 2 forms. These results can be explained in the context of three binary diffusion couples, W-Si, W-Al, Al-Si, and the individual interactions associated with these couples.},
 bibtype = {techreport},
 author = {Thomas Perepezko, Wiley}
}
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