The role of stacking faults and their associated 0.13 ev acceptor state in doped and undoped ZnO layers and nanostructures. Thonke, K., Schirra, M., Schneider, R., Reiser, A., Prinz, G. M., Feneberg, M., Biskupek, J., Kaiser, U., & Sauer, R. Microelectron. J., 40(2):210-214, 2009.
The role of stacking faults and their associated 0.13 ev acceptor state in doped and undoped ZnO layers and nanostructures. [link]Link  The role of stacking faults and their associated 0.13 ev acceptor state in doped and undoped ZnO layers and nanostructures. [link]Paper  bibtex   
@article{journals/mj/ThonkeSSRPFBKS09,
  added-at = {2020-11-06T00:00:00.000+0100},
  author = {Thonke, Klaus and Schirra, M. and Schneider, R. and Reiser, A. and Prinz, G. M. and Feneberg, Martin and Biskupek, Johannes and Kaiser, U. and Sauer, R.},
  biburl = {https://www.bibsonomy.org/bibtex/22c72ce39f0c5ca93d3d88dcedd9d186c/dblp},
  ee = {https://doi.org/10.1016/j.mejo.2008.07.031},
  interhash = {fcad03ddbc8a292a5534f71180b8c98e},
  intrahash = {2c72ce39f0c5ca93d3d88dcedd9d186c},
  journal = {Microelectron. J.},
  keywords = {dblp},
  number = 2,
  pages = {210-214},
  timestamp = {2020-11-07T11:34:55.000+0100},
  title = {The role of stacking faults and their associated 0.13 ev acceptor state in doped and undoped ZnO layers and nanostructures.},
  url = {http://dblp.uni-trier.de/db/journals/mj/mj40.html#ThonkeSSRPFBKS09},
  volume = 40,
  year = 2009
}

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