Logiciel Hikad : mode l ’ organisation atomique durant la croissance de HfO 2 sur silicium. TI Techniques de l'Ingénieur. Paper bibtex @article{
title = {Logiciel Hikad : mode l ’ organisation atomique durant la croissance de HfO 2 sur silicium},
type = {article},
pages = {1-2},
id = {425b856a-c7f9-3dff-ab1a-07888ec9f472},
created = {2011-12-16T13:17:43.000Z},
file_attached = {true},
profile_id = {181202e9-9e14-3446-b699-8df37a3580b5},
group_id = {36e61195-3063-323c-b879-d6d31394db8a},
last_modified = {2017-03-14T14:39:23.619Z},
tags = {Chimie,Physique},
read = {false},
starred = {false},
authored = {false},
confirmed = {true},
hidden = {false},
citation_key = {TIcmf},
folder_uuids = {06f7a34f-9523-43bd-a753-049ac794319e},
private_publication = {false},
bibtype = {article},
author = {TI, undefined},
journal = {Techniques de l'Ingénieur}
}
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{"_id":"vpEAJNacJtnuJjNLw","bibbaseid":"ti-logicielhikadmodelorganisationatomiquedurantlacroissancedehfo2sursilicium","downloads":0,"creationDate":"2017-10-18T08:27:05.973Z","title":"Logiciel Hikad : mode l ’ organisation atomique durant la croissance de HfO 2 sur silicium","author_short":["TI"],"year":null,"bibtype":"article","biburl":null,"bibdata":{"title":"Logiciel Hikad : mode l ’ organisation atomique durant la croissance de HfO 2 sur silicium","type":"article","pages":"1-2","id":"425b856a-c7f9-3dff-ab1a-07888ec9f472","created":"2011-12-16T13:17:43.000Z","file_attached":"true","profile_id":"181202e9-9e14-3446-b699-8df37a3580b5","group_id":"36e61195-3063-323c-b879-d6d31394db8a","last_modified":"2017-03-14T14:39:23.619Z","tags":"Chimie,Physique","read":false,"starred":false,"authored":false,"confirmed":"true","hidden":false,"citation_key":"TIcmf","folder_uuids":"06f7a34f-9523-43bd-a753-049ac794319e","private_publication":false,"bibtype":"article","author":"TI, undefined","journal":"Techniques de l'Ingénieur","bibtex":"@article{\n title = {Logiciel Hikad : mode l ’ organisation atomique durant la croissance de HfO 2 sur silicium},\n type = {article},\n pages = {1-2},\n id = {425b856a-c7f9-3dff-ab1a-07888ec9f472},\n created = {2011-12-16T13:17:43.000Z},\n file_attached = {true},\n profile_id = {181202e9-9e14-3446-b699-8df37a3580b5},\n group_id = {36e61195-3063-323c-b879-d6d31394db8a},\n last_modified = {2017-03-14T14:39:23.619Z},\n tags = {Chimie,Physique},\n read = {false},\n starred = {false},\n authored = {false},\n confirmed = {true},\n hidden = {false},\n citation_key = {TIcmf},\n folder_uuids = {06f7a34f-9523-43bd-a753-049ac794319e},\n private_publication = {false},\n bibtype = {article},\n author = {TI, undefined},\n journal = {Techniques de l'Ingénieur}\n}","author_short":["TI"],"urls":{"Paper":"https://bibbase.org/service/mendeley/25bd5b32-29aa-37df-a206-ab5dc511be68/file/040ffaa3-3efd-998f-19ed-c988b4fea93b/Logiciel_Hikad__mode_l__organisation_atomique_durant_la_croissance_de_HfO_2_sur_silicium.pdf.pdf"},"bibbaseid":"ti-logicielhikadmodelorganisationatomiquedurantlacroissancedehfo2sursilicium","role":"author","downloads":0,"html":""},"search_terms":["logiciel","hikad","mode","organisation","atomique","durant","croissance","hfo","sur","silicium","ti"],"keywords":[],"authorIDs":[]}