@article{tillmann_quantitative_2004,
	title = {Quantitative {Transmission} {Electron} {Microscopy} {Analysis} of the {Pressure} of {Helium}-{Filled} {Cracks} in {Implanted} {Silicon}},
	volume = {10},
	issn = {1431-9276, 1435-8115},
	url = {http://www.journals.cambridge.org/abstract_S1431927604040024},
	doi = {10/cvs4m5},
	abstract = {The pressure of crack-shaped cavities formed in silicon upon implantation with helium and subsequent annealing is quantitatively determined from the measurement of diffraction contrast features visible in transmission electron micrographs taken under well-defined dynamical two-beam conditions. For this purpose, simulated images, based on the elastic displacements associated with a Griffith crack, are matched to experimental micrographs, thus yielding unambiguous quantitative data on the ratio p/m of the cavity pressure to the silicon matrix shear modulus. Experimental results demonstrate cavity radii of some 10 nm and p/m values up to 0.22, which may be regarded as sufficiently high for the emission of dislocation loops from the cracks.},
	language = {en},
	number = {02},
	urldate = {2019-08-26},
	journal = {Microscopy and Microanalysis},
	author = {Tillmann, K. and Hüging, N. and Trinkaus, H. and Luysberg, M.},
	month = apr,
	year = {2004},
	note = {00008},
	pages = {199--214},
}

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