Two-dimensional dopant profiling of a 60 nm gate length nMOSFET using scanning capacitance microscopy. Timp, W., O'Malley, M., Kleiman, R., & Garno, J. In Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International, pages 555–558, December, 1998. doi abstract bibtex It is now possible using scanning capacitance microscopy to directly obtain a two-dimensional profile of the doping in MOSFETs with gate lengths greater than 60 nm. We have accomplished this using highly doped, ultrasharp silicon cantilevers with a tip diameter of less than 10 nm. These tips provide images with very little voltage dependence (over a 1-2 V range), and improved resolution (\textless20 nm). The observed carrier density profiles correspond closely to die simulations of the dopant distribution and indicate that a straightforward interpretation of die image derived for ultra-sharp silicon tips is possible, in contrast to previous work on metal tips which manifested a dramatic voltage dependence and \textgreater30-50 nm resolution.
@inproceedings{timp_two-dimensional_1998,
title = {Two-dimensional dopant profiling of a 60 nm gate length {nMOSFET} using scanning capacitance microscopy},
doi = {10.1109/IEDM.1998.746419},
abstract = {It is now possible using scanning capacitance microscopy to directly obtain a two-dimensional profile of the doping in MOSFETs with gate lengths greater than 60 nm. We have accomplished this using highly doped, ultrasharp silicon cantilevers with a tip diameter of less than 10 nm. These tips provide images with very little voltage dependence (over a 1-2 V range), and improved resolution ({\textless}20 nm). The observed carrier density profiles correspond closely to die simulations of the dopant distribution and indicate that a straightforward interpretation of die image derived for ultra-sharp silicon tips is possible, in contrast to previous work on metal tips which manifested a dramatic voltage dependence and {\textgreater}30-50 nm resolution.},
booktitle = {Electron {Devices} {Meeting}, 1998. {IEDM} '98. {Technical} {Digest}., {International}},
author = {Timp, W. and O'Malley, M.L. and Kleiman, R.N. and Garno, J.P.},
author+an = {1=pi},
month = dec,
year = {1998},
keywords = {1 to 2 V, 2D dopant profiling, 10 nm, 60 nm, capacitance, carrier density, carrier density profiles, dopant distribution, doping profiles, highly doped Si cantilever, Image resolution, microscopy, MOSFET, MOSFET circuits, n-channel MOSFET, nMOSFET, Paints, scanning capacitance microscopy, semiconductor device measurement, Silicon, Silver, two-dimensional dopant profiling, UHF measurements, ultra-sharp Si tips, Voltage},
pages = {555--558},
file = {IEEE Xplore Abstract Record:/Users/timp/Library/Application Support/Zotero/Profiles/lsaq8gr4.default/zotero/storage/97K4FC5Q/abs_all.html:text/html;IEEE Xplore Full Text PDF:/Users/timp/Library/Application Support/Zotero/Profiles/lsaq8gr4.default/zotero/storage/FWATDG3E/Timp et al. - 1998 - Two-dimensional dopant profiling of a 60 nm gate l.pdf:application/pdf}
}
Downloads: 0
{"_id":"ncYtkgPkFHZZtAowY","bibbaseid":"timp-omalley-kleiman-garno-twodimensionaldopantprofilingofa60nmgatelengthnmosfetusingscanningcapacitancemicroscopy-1998","authorIDs":[],"author_short":["Timp, W.","O'Malley, M.","Kleiman, R.","Garno, J."],"bibdata":{"bibtype":"inproceedings","type":"inproceedings","title":"Two-dimensional dopant profiling of a 60 nm gate length nMOSFET using scanning capacitance microscopy","doi":"10.1109/IEDM.1998.746419","abstract":"It is now possible using scanning capacitance microscopy to directly obtain a two-dimensional profile of the doping in MOSFETs with gate lengths greater than 60 nm. We have accomplished this using highly doped, ultrasharp silicon cantilevers with a tip diameter of less than 10 nm. These tips provide images with very little voltage dependence (over a 1-2 V range), and improved resolution (\\textless20 nm). The observed carrier density profiles correspond closely to die simulations of the dopant distribution and indicate that a straightforward interpretation of die image derived for ultra-sharp silicon tips is possible, in contrast to previous work on metal tips which manifested a dramatic voltage dependence and \\textgreater30-50 nm resolution.","booktitle":"Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International","author":[{"propositions":[],"lastnames":["Timp"],"firstnames":["W."],"suffixes":[]},{"propositions":[],"lastnames":["O'Malley"],"firstnames":["M.L."],"suffixes":[]},{"propositions":[],"lastnames":["Kleiman"],"firstnames":["R.N."],"suffixes":[]},{"propositions":[],"lastnames":["Garno"],"firstnames":["J.P."],"suffixes":[]}],"author+an":"1=pi","month":"December","year":"1998","keywords":"1 to 2 V, 2D dopant profiling, 10 nm, 60 nm, capacitance, carrier density, carrier density profiles, dopant distribution, doping profiles, highly doped Si cantilever, Image resolution, microscopy, MOSFET, MOSFET circuits, n-channel MOSFET, nMOSFET, Paints, scanning capacitance microscopy, semiconductor device measurement, Silicon, Silver, two-dimensional dopant profiling, UHF measurements, ultra-sharp Si tips, Voltage","pages":"555–558","file":"IEEE Xplore Abstract Record:/Users/timp/Library/Application Support/Zotero/Profiles/lsaq8gr4.default/zotero/storage/97K4FC5Q/abs_all.html:text/html;IEEE Xplore Full Text PDF:/Users/timp/Library/Application Support/Zotero/Profiles/lsaq8gr4.default/zotero/storage/FWATDG3E/Timp et al. - 1998 - Two-dimensional dopant profiling of a 60 nm gate l.pdf:application/pdf","bibtex":"@inproceedings{timp_two-dimensional_1998,\n\ttitle = {Two-dimensional dopant profiling of a 60 nm gate length {nMOSFET} using scanning capacitance microscopy},\n\tdoi = {10.1109/IEDM.1998.746419},\n\tabstract = {It is now possible using scanning capacitance microscopy to directly obtain a two-dimensional profile of the doping in MOSFETs with gate lengths greater than 60 nm. We have accomplished this using highly doped, ultrasharp silicon cantilevers with a tip diameter of less than 10 nm. These tips provide images with very little voltage dependence (over a 1-2 V range), and improved resolution ({\\textless}20 nm). The observed carrier density profiles correspond closely to die simulations of the dopant distribution and indicate that a straightforward interpretation of die image derived for ultra-sharp silicon tips is possible, in contrast to previous work on metal tips which manifested a dramatic voltage dependence and {\\textgreater}30-50 nm resolution.},\n\tbooktitle = {Electron {Devices} {Meeting}, 1998. {IEDM} '98. {Technical} {Digest}., {International}},\n\tauthor = {Timp, W. and O'Malley, M.L. and Kleiman, R.N. and Garno, J.P.},\n author+an = {1=pi},\n\tmonth = dec,\n\tyear = {1998},\n\tkeywords = {1 to 2 V, 2D dopant profiling, 10 nm, 60 nm, capacitance, carrier density, carrier density profiles, dopant distribution, doping profiles, highly doped Si cantilever, Image resolution, microscopy, MOSFET, MOSFET circuits, n-channel MOSFET, nMOSFET, Paints, scanning capacitance microscopy, semiconductor device measurement, Silicon, Silver, two-dimensional dopant profiling, UHF measurements, ultra-sharp Si tips, Voltage},\n\tpages = {555--558},\n\tfile = {IEEE Xplore Abstract Record:/Users/timp/Library/Application Support/Zotero/Profiles/lsaq8gr4.default/zotero/storage/97K4FC5Q/abs_all.html:text/html;IEEE Xplore Full Text PDF:/Users/timp/Library/Application Support/Zotero/Profiles/lsaq8gr4.default/zotero/storage/FWATDG3E/Timp et al. - 1998 - Two-dimensional dopant profiling of a 60 nm gate l.pdf:application/pdf}\n}\n\n","author_short":["Timp, W.","O'Malley, M.","Kleiman, R.","Garno, J."],"key":"timp_two-dimensional_1998","id":"timp_two-dimensional_1998","bibbaseid":"timp-omalley-kleiman-garno-twodimensionaldopantprofilingofa60nmgatelengthnmosfetusingscanningcapacitancemicroscopy-1998","role":"author","urls":{},"keyword":["1 to 2 V","2D dopant profiling","10 nm","60 nm","capacitance","carrier density","carrier density profiles","dopant distribution","doping profiles","highly doped Si cantilever","Image resolution","microscopy","MOSFET","MOSFET circuits","n-channel MOSFET","nMOSFET","Paints","scanning capacitance microscopy","semiconductor device measurement","Silicon","Silver","two-dimensional dopant profiling","UHF measurements","ultra-sharp Si tips","Voltage"],"downloads":0},"bibtype":"inproceedings","biburl":"http://timplab.org/data/Timp_Works.bib","creationDate":"2019-04-27T11:04:17.861Z","downloads":0,"keywords":["1 to 2 v","2d dopant profiling","10 nm","60 nm","capacitance","carrier density","carrier density profiles","dopant distribution","doping profiles","highly doped si cantilever","image resolution","microscopy","mosfet","mosfet circuits","n-channel mosfet","nmosfet","paints","scanning capacitance microscopy","semiconductor device measurement","silicon","silver","two-dimensional dopant profiling","uhf measurements","ultra-sharp si tips","voltage"],"search_terms":["two","dimensional","dopant","profiling","gate","length","nmosfet","using","scanning","capacitance","microscopy","timp","o'malley","kleiman","garno"],"title":"Two-dimensional dopant profiling of a 60 nm gate length nMOSFET using scanning capacitance microscopy","year":1998,"dataSources":["eEdcFPY52YjFKPQiE"]}