MATERIALS WITH A BURIED C(60) LAYER PRODUCED BY DIRECT WAFER BONDING. TONG, Q., EOM, C., GOSELE, U, & HEBARD, A. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 141(10):L137-L138, OCT, 1994. doi abstract bibtex Si wafers covered with a sublimed C60 layer have been directly bonded to bare or oxidized Si wafers at room temperature via Van der Waals attraction forces. The interface energies of the bonded pairs increase during storage in air at room temperature and approach saturated values after approximately 200 h. The typical saturated interface energy of C60/SiO2 (approximately 40 erg/cm2) is higher than that of C60/Si (20-30 erg/cm2). Other material combinations having a C60 buried layer may also be realized by wafer bonding for specific applications.
@article{ ISI:A1994PM01300002,
Author = {TONG, QY and EOM, CB and GOSELE, U and HEBARD, AF},
Title = {{MATERIALS WITH A BURIED C(60) LAYER PRODUCED BY DIRECT WAFER BONDING}},
Journal = {{JOURNAL OF THE ELECTROCHEMICAL SOCIETY}},
Year = {{1994}},
Volume = {{141}},
Number = {{10}},
Pages = {{L137-L138}},
Month = {{OCT}},
Abstract = {{Si wafers covered with a sublimed C60 layer have been directly bonded to
bare or oxidized Si wafers at room temperature via Van der Waals
attraction forces. The interface energies of the bonded pairs increase
during storage in air at room temperature and approach saturated values
after approximately 200 h. The typical saturated interface energy of
C60/SiO2 (approximately 40 erg/cm2) is higher than that of C60/Si (20-30
erg/cm2). Other material combinations having a C60 buried layer may
also be realized by wafer bonding for specific applications.}},
DOI = {{10.1149/1.2059259}},
ISSN = {{0013-4651}},
ResearcherID-Numbers = {{Eom, Chang-Beom/I-5567-2014}},
Unique-ID = {{ISI:A1994PM01300002}},
}
Downloads: 0
{"_id":"HFJiNWhQLhG7bjSto","bibbaseid":"tong-eom-gosele-hebard-materialswithaburiedc60layerproducedbydirectwaferbonding-1994","downloads":0,"creationDate":"2018-09-17T23:43:10.573Z","title":"MATERIALS WITH A BURIED C(60) LAYER PRODUCED BY DIRECT WAFER BONDING","author_short":["TONG, Q.","EOM, C.","GOSELE, U","HEBARD, A."],"year":1994,"bibtype":"article","biburl":"http://oxide.engr.wisc.edu/newWebsite/papers/oxide.bib","bibdata":{"bibtype":"article","type":"article","author":[{"propositions":[],"lastnames":["TONG"],"firstnames":["QY"],"suffixes":[]},{"propositions":[],"lastnames":["EOM"],"firstnames":["CB"],"suffixes":[]},{"propositions":[],"lastnames":["GOSELE"],"firstnames":["U"],"suffixes":[]},{"propositions":[],"lastnames":["HEBARD"],"firstnames":["AF"],"suffixes":[]}],"title":"MATERIALS WITH A BURIED C(60) LAYER PRODUCED BY DIRECT WAFER BONDING","journal":"JOURNAL OF THE ELECTROCHEMICAL SOCIETY","year":"1994","volume":"141","number":"10","pages":"L137-L138","month":"OCT","abstract":"Si wafers covered with a sublimed C60 layer have been directly bonded to bare or oxidized Si wafers at room temperature via Van der Waals attraction forces. The interface energies of the bonded pairs increase during storage in air at room temperature and approach saturated values after approximately 200 h. The typical saturated interface energy of C60/SiO2 (approximately 40 erg/cm2) is higher than that of C60/Si (20-30 erg/cm2). Other material combinations having a C60 buried layer may also be realized by wafer bonding for specific applications.","doi":"10.1149/1.2059259","issn":"0013-4651","researcherid-numbers":"Eom, Chang-Beom/I-5567-2014","unique-id":"ISI:A1994PM01300002","bibtex":"@article{ ISI:A1994PM01300002,\nAuthor = {TONG, QY and EOM, CB and GOSELE, U and HEBARD, AF},\nTitle = {{MATERIALS WITH A BURIED C(60) LAYER PRODUCED BY DIRECT WAFER BONDING}},\nJournal = {{JOURNAL OF THE ELECTROCHEMICAL SOCIETY}},\nYear = {{1994}},\nVolume = {{141}},\nNumber = {{10}},\nPages = {{L137-L138}},\nMonth = {{OCT}},\nAbstract = {{Si wafers covered with a sublimed C60 layer have been directly bonded to\n bare or oxidized Si wafers at room temperature via Van der Waals\n attraction forces. The interface energies of the bonded pairs increase\n during storage in air at room temperature and approach saturated values\n after approximately 200 h. The typical saturated interface energy of\n C60/SiO2 (approximately 40 erg/cm2) is higher than that of C60/Si (20-30\n erg/cm2). Other material combinations having a C60 buried layer may\n also be realized by wafer bonding for specific applications.}},\nDOI = {{10.1149/1.2059259}},\nISSN = {{0013-4651}},\nResearcherID-Numbers = {{Eom, Chang-Beom/I-5567-2014}},\nUnique-ID = {{ISI:A1994PM01300002}},\n}\n\n","author_short":["TONG, Q.","EOM, C.","GOSELE, U","HEBARD, A."],"key":"ISI:A1994PM01300002","id":"ISI:A1994PM01300002","bibbaseid":"tong-eom-gosele-hebard-materialswithaburiedc60layerproducedbydirectwaferbonding-1994","role":"author","urls":{},"downloads":0,"html":""},"search_terms":["materials","buried","layer","produced","direct","wafer","bonding","tong","eom","gosele","hebard"],"keywords":[],"authorIDs":[],"dataSources":["zArY7xMz8KdDswhhx"]}