@article{ ISI:A1994PM01300002,
Author = {TONG, QY and EOM, CB and GOSELE, U and HEBARD, AF},
Title = {{MATERIALS WITH A BURIED C(60) LAYER PRODUCED BY DIRECT WAFER BONDING}},
Journal = {{JOURNAL OF THE ELECTROCHEMICAL SOCIETY}},
Year = {{1994}},
Volume = {{141}},
Number = {{10}},
Pages = {{L137-L138}},
Month = {{OCT}},
Abstract = {{Si wafers covered with a sublimed C60 layer have been directly bonded to
   bare or oxidized Si wafers at room temperature via Van der Waals
   attraction forces.  The interface energies of the bonded pairs increase
   during storage in air at room temperature and approach saturated values
   after approximately 200 h.  The typical saturated interface energy of
   C60/SiO2 (approximately 40 erg/cm2) is higher than that of C60/Si (20-30
   erg/cm2).  Other material combinations having a C60 buried layer may
   also be realized by wafer bonding for specific applications.}},
DOI = {{10.1149/1.2059259}},
ISSN = {{0013-4651}},
ResearcherID-Numbers = {{Eom, Chang-Beom/I-5567-2014}},
Unique-ID = {{ISI:A1994PM01300002}},
}

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