@article{tsoutsou_atomic_2009,
	title = {Atomic layer deposition of {LaxZr1}-{xO2}-delta (x=0.25) high-k dielectrics for advanced gate stacks},
	volume = {94},
	issn = {0003-6951},
	doi = {10.1063/1.3075609},
	abstract = {Thin LaxZr1-xO2-delta (x=0.25) high permittivity (k) films are grown on Si(100) by atomic layer deposition at 300 degrees C using ((PrCp)-Pr-i)(3)La, (MeCp)(2)ZrMe(OMe) and O-3 species. Their properties are studied by grazing incidence x-ray diffraction, high resolution transmission electron microscopy, electron energy loss spectroscopy, x-ray photoelectron spectroscopy, and electrical measurements on the as-grown films and after vacuum annealing at 600 degrees C. Annealed films feature resistance to hygroscopicity, a large k value of around 30 and an acceptable leakage current density. A low-k silica-rich interlayer is also evidenced at both pristine and annealed high-k/Si interfaces.},
	language = {English},
	number = {5},
	journal = {Applied Physics Letters},
	author = {Tsoutsou, D. and Lamagna, L. and Volkos, S. N. and Molle, A. and Baldovino, S. and Schamm, S. and Coulon, P. E. and Fanciulli, M.},
	month = feb,
	year = {2009},
	note = {WOS:000263167000077},
	keywords = {Annealing, Atomic layer deposition, Permittivity, Transmission   electron microscopy, X-ray diffraction, X-ray photoelectron spectra, electron energy loss spectra, elemental semiconductors, films, high-k dielectric thin films, lanthanum   compounds, leakage currents, oxides, silicon, zro2},
	pages = {053504},
}

{"_id":{"_str":"534297d80e946d920a002072"},"__v":1,"authorIDs":[],"author_short":["Tsoutsou, D.","Lamagna, L.","Volkos, S. N.","Molle, A.","Baldovino, S.","Schamm, S.","Coulon, P. E.","Fanciulli, M."],"bibbaseid":"tsoutsou-lamagna-volkos-molle-baldovino-schamm-coulon-fanciulli-atomiclayerdepositionoflaxzr1xo2deltax025highkdielectricsforadvancedgatestacks-2009","bibdata":{"bibtype":"article","type":"article","title":"Atomic layer deposition of LaxZr1-xO2-delta (x=0.25) high-k dielectrics for advanced gate stacks","volume":"94","issn":"0003-6951","doi":"10.1063/1.3075609","abstract":"Thin LaxZr1-xO2-delta (x=0.25) high permittivity (k) films are grown on Si(100) by atomic layer deposition at 300 degrees C using ((PrCp)-Pr-i)(3)La, (MeCp)(2)ZrMe(OMe) and O-3 species. Their properties are studied by grazing incidence x-ray diffraction, high resolution transmission electron microscopy, electron energy loss spectroscopy, x-ray photoelectron spectroscopy, and electrical measurements on the as-grown films and after vacuum annealing at 600 degrees C. Annealed films feature resistance to hygroscopicity, a large k value of around 30 and an acceptable leakage current density. A low-k silica-rich interlayer is also evidenced at both pristine and annealed high-k/Si interfaces.","language":"English","number":"5","journal":"Applied Physics Letters","author":[{"propositions":[],"lastnames":["Tsoutsou"],"firstnames":["D."],"suffixes":[]},{"propositions":[],"lastnames":["Lamagna"],"firstnames":["L."],"suffixes":[]},{"propositions":[],"lastnames":["Volkos"],"firstnames":["S.","N."],"suffixes":[]},{"propositions":[],"lastnames":["Molle"],"firstnames":["A."],"suffixes":[]},{"propositions":[],"lastnames":["Baldovino"],"firstnames":["S."],"suffixes":[]},{"propositions":[],"lastnames":["Schamm"],"firstnames":["S."],"suffixes":[]},{"propositions":[],"lastnames":["Coulon"],"firstnames":["P.","E."],"suffixes":[]},{"propositions":[],"lastnames":["Fanciulli"],"firstnames":["M."],"suffixes":[]}],"month":"February","year":"2009","note":"WOS:000263167000077","keywords":"Annealing, Atomic layer deposition, Permittivity, Transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectra, electron energy loss spectra, elemental semiconductors, films, high-k dielectric thin films, lanthanum compounds, leakage currents, oxides, silicon, zro2","pages":"053504","bibtex":"@article{tsoutsou_atomic_2009,\n\ttitle = {Atomic layer deposition of {LaxZr1}-{xO2}-delta (x=0.25) high-k dielectrics for advanced gate stacks},\n\tvolume = {94},\n\tissn = {0003-6951},\n\tdoi = {10.1063/1.3075609},\n\tabstract = {Thin LaxZr1-xO2-delta (x=0.25) high permittivity (k) films are grown on Si(100) by atomic layer deposition at 300 degrees C using ((PrCp)-Pr-i)(3)La, (MeCp)(2)ZrMe(OMe) and O-3 species. Their properties are studied by grazing incidence x-ray diffraction, high resolution transmission electron microscopy, electron energy loss spectroscopy, x-ray photoelectron spectroscopy, and electrical measurements on the as-grown films and after vacuum annealing at 600 degrees C. Annealed films feature resistance to hygroscopicity, a large k value of around 30 and an acceptable leakage current density. A low-k silica-rich interlayer is also evidenced at both pristine and annealed high-k/Si interfaces.},\n\tlanguage = {English},\n\tnumber = {5},\n\tjournal = {Applied Physics Letters},\n\tauthor = {Tsoutsou, D. and Lamagna, L. and Volkos, S. N. and Molle, A. and Baldovino, S. and Schamm, S. and Coulon, P. 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