Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates. Tyagi, A., Wu, F., Young, E. C., Chakraborty, A., Ohta, H., Bhat, R., Fujito, K., DenBaars, S. P., Nakamura, S., & Speck, J. S. Applied Physics Letters, 95(25):251905, December, 2009. ![Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi bibtex @article{tyagi_partial_2009,
title = {Partial strain relaxation via misfit dislocation generation at heterointerfaces in ({Al},{In}){GaN} epitaxial layers grown on semipolar (112¯2) {GaN} free standing substrates},
volume = {95},
issn = {0003-6951, 1077-3118},
url = {https://pubs.aip.org/aip/apl/article/118530},
doi = {10.1063/1.3275717},
language = {en},
number = {25},
urldate = {2023-05-19},
journal = {Applied Physics Letters},
author = {Tyagi, Anurag and Wu, Feng and Young, Erin C. and Chakraborty, Arpan and Ohta, Hiroaki and Bhat, Rajaram and Fujito, Kenji and DenBaars, Steven P. and Nakamura, Shuji and Speck, James S.},
month = dec,
year = {2009},
keywords = {Semipolar},
pages = {251905},
}
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