STT-MRAM-Based PUF Architecture Exploiting Magnetic Tunnel Junction Fabrication-Induced Variability. Vatajelu, E. I., Natale, G. D., Barbareschi, M., Torres, L., Indaco, M., & Prinetto, P. J. Emerg. Technol. Comput. Syst., 13(1):5:1–5:21, May, 2016.
STT-MRAM-Based PUF Architecture Exploiting Magnetic Tunnel Junction Fabrication-Induced Variability [link]Paper  doi  bibtex   
@article{vatajelu_stt-mram-based_2016,
	title = {{STT}-{MRAM}-{Based} {PUF} {Architecture} {Exploiting} {Magnetic} {Tunnel} {Junction} {Fabrication}-{Induced} {Variability}},
	volume = {13},
	issn = {1550-4832},
	url = {http://doi.acm.org/10.1145/2790302},
	doi = {10.1145/2790302},
	number = {1},
	urldate = {2016-07-31TZ},
	journal = {J. Emerg. Technol. Comput. Syst.},
	author = {Vatajelu, Elena Ioana and Natale, Giorgio Di and Barbareschi, Mario and Torres, Lionel and Indaco, Marco and Prinetto, Paolo},
	month = may,
	year = {2016},
	pages = {5:1--5:21}
}

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