@article{
 title = {The effect of temperature gradient and ampoule velocity on the composition and other properties of Bridgman-grown indium antimonide},
 type = {article},
 year = {1998},
 identifiers = {[object Object]},
 keywords = {Bridgman method,InSb,Interface,Off-stoichiometry},
 volume = {186},
 id = {1000b7c5-4075-38d5-9247-576aba02c9ce},
 created = {2017-12-23T03:31:27.066Z},
 file_attached = {false},
 profile_id = {23095e0e-05c6-31ad-836f-b2c421d2a7dd},
 last_modified = {2017-12-23T03:31:27.066Z},
 read = {false},
 starred = {false},
 authored = {true},
 confirmed = {false},
 hidden = {false},
 private_publication = {false},
 abstract = {A systematic study of the role of the melt-solid interface position in determining the crystal quality of Bridgman-grown indium antimonide ingots is made. The crystals are grown under various conditions of imposed gradients and velocities. The gradient-to-velocity ratio A in the crystal is seen to move the interface position above or below the melting-point isotherm and this in turn affects crystal quality and grain structure. Post-growth investigations reveal that the growth takes place under off-stoichiometric conditions, for large as well as for small values of Λ, undesirable for growth of high-quality homogeneous ingots of InSb. However, crystals grown under 'near-equilibrium' conditions are stoichiometric, show low defect density, improved grain structure and comparatively narrow rocking-curve width, with very high mobility. © 1998 Elsevier Science B.V. All rights reserved.},
 bibtype = {article},
 author = {Venkataraghavan, R. and Rao, K.S.R.K. and Bhat, H.L.},
 journal = {Journal of Crystal Growth},
 number = {3}
}

{"_id":"HMyGPoFD9ADaJ9n8x","bibbaseid":"venkataraghavan-rao-bhat-theeffectoftemperaturegradientandampoulevelocityonthecompositionandotherpropertiesofbridgmangrownindiumantimonide-1998","authorIDs":["5d686af1ecb7dbda01000178"],"author_short":["Venkataraghavan, R.","Rao, K.","Bhat, H."],"bibdata":{"title":"The effect of temperature gradient and ampoule velocity on the composition and other properties of Bridgman-grown indium antimonide","type":"article","year":"1998","identifiers":"[object Object]","keywords":"Bridgman method,InSb,Interface,Off-stoichiometry","volume":"186","id":"1000b7c5-4075-38d5-9247-576aba02c9ce","created":"2017-12-23T03:31:27.066Z","file_attached":false,"profile_id":"23095e0e-05c6-31ad-836f-b2c421d2a7dd","last_modified":"2017-12-23T03:31:27.066Z","read":false,"starred":false,"authored":"true","confirmed":false,"hidden":false,"private_publication":false,"abstract":"A systematic study of the role of the melt-solid interface position in determining the crystal quality of Bridgman-grown indium antimonide ingots is made. The crystals are grown under various conditions of imposed gradients and velocities. The gradient-to-velocity ratio A in the crystal is seen to move the interface position above or below the melting-point isotherm and this in turn affects crystal quality and grain structure. Post-growth investigations reveal that the growth takes place under off-stoichiometric conditions, for large as well as for small values of Λ, undesirable for growth of high-quality homogeneous ingots of InSb. However, crystals grown under 'near-equilibrium' conditions are stoichiometric, show low defect density, improved grain structure and comparatively narrow rocking-curve width, with very high mobility. © 1998 Elsevier Science B.V. All rights reserved.","bibtype":"article","author":"Venkataraghavan, R. and Rao, K.S.R.K. and Bhat, H.L.","journal":"Journal of Crystal Growth","number":"3","bibtex":"@article{\n title = {The effect of temperature gradient and ampoule velocity on the composition and other properties of Bridgman-grown indium antimonide},\n type = {article},\n year = {1998},\n identifiers = {[object Object]},\n keywords = {Bridgman method,InSb,Interface,Off-stoichiometry},\n volume = {186},\n id = {1000b7c5-4075-38d5-9247-576aba02c9ce},\n created = {2017-12-23T03:31:27.066Z},\n file_attached = {false},\n profile_id = {23095e0e-05c6-31ad-836f-b2c421d2a7dd},\n last_modified = {2017-12-23T03:31:27.066Z},\n read = {false},\n starred = {false},\n authored = {true},\n confirmed = {false},\n hidden = {false},\n private_publication = {false},\n abstract = {A systematic study of the role of the melt-solid interface position in determining the crystal quality of Bridgman-grown indium antimonide ingots is made. The crystals are grown under various conditions of imposed gradients and velocities. The gradient-to-velocity ratio A in the crystal is seen to move the interface position above or below the melting-point isotherm and this in turn affects crystal quality and grain structure. Post-growth investigations reveal that the growth takes place under off-stoichiometric conditions, for large as well as for small values of Λ, undesirable for growth of high-quality homogeneous ingots of InSb. However, crystals grown under 'near-equilibrium' conditions are stoichiometric, show low defect density, improved grain structure and comparatively narrow rocking-curve width, with very high mobility. © 1998 Elsevier Science B.V. All rights reserved.},\n bibtype = {article},\n author = {Venkataraghavan, R. and Rao, K.S.R.K. and Bhat, H.L.},\n journal = {Journal of Crystal Growth},\n number = {3}\n}","author_short":["Venkataraghavan, R.","Rao, K.","Bhat, H."],"bibbaseid":"venkataraghavan-rao-bhat-theeffectoftemperaturegradientandampoulevelocityonthecompositionandotherpropertiesofbridgmangrownindiumantimonide-1998","role":"author","urls":{},"keyword":["Bridgman method","InSb","Interface","Off-stoichiometry"],"downloads":0,"html":""},"bibtype":"article","creationDate":"2019-08-30T00:16:49.790Z","downloads":0,"keywords":["bridgman method","insb","interface","off-stoichiometry"],"search_terms":["effect","temperature","gradient","ampoule","velocity","composition","properties","bridgman","grown","indium","antimonide","venkataraghavan","rao","bhat"],"title":"The effect of temperature gradient and ampoule velocity on the composition and other properties of Bridgman-grown indium antimonide","year":1998}