Grain engineering for improved charge carrier transport in two-dimensional lead-free perovskite field-effect transistors. Wang, S., Frisch, S., Zhang, H., Yildiz, O., Mandal, M., Ugur, N., Jeong, B., Ramanan, C., Andrienko, D., I. Wang, H., Bonn, M., M. Blom, P. W., Kivala, M., Pisula, W., & Marszalek, T. Materials Horizons, August, 2022. Publisher: Royal Society of ChemistryPaper doi bibtex @article{wang_grain_2022,
title = {Grain engineering for improved charge carrier transport in two-dimensional lead-free perovskite field-effect transistors},
copyright = {All rights reserved},
url = {https://pubs.rsc.org/en/content/articlelanding/2022/mh/d2mh00632d},
doi = {10.1039/D2MH00632D},
language = {en},
urldate = {2022-08-31},
journal = {Materials Horizons},
author = {Wang, Shuanglong and Frisch, Sabine and Zhang, Heng and Yildiz, Okan and Mandal, Mukunda and Ugur, Naz and Jeong, Beomjin and Ramanan, Charusheela and Andrienko, Denis and I. Wang, Hai and Bonn, Mischa and M. Blom, Paul W. and Kivala, Milan and Pisula, Wojciech and Marszalek, Tomasz},
month = aug,
year = {2022},
note = {Publisher: Royal Society of Chemistry},
}
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