A non-volatile look-up table design using PCM (phase-change memory) cells

A non-volatile look-up table design using PCM (phase-change memory) cells. Wen<sup>S</sup>, C. Y., Li, J., Kim, S., Breitwisch, M., Lam, C., Paramesh, J., & Pileggi, L. T. In 2011 Symposium on VLSI Circuits - Digest of Technical Papers, pages 302–303, June, 2011. (Acceptance Rate: 28%, 115 out of 409)
bibtex

@INPROCEEDINGS{wen2011vlci, 
author={C. Y. Wen<sup>S</sup> and Jing Li and S. Kim and M. Breitwisch and C. Lam and J. Paramesh and L. T. Pileggi}, 
booktitle={2011 Symposium on VLSI Circuits - Digest of Technical Papers}, 
title={A non-volatile look-up table design using {PCM} (phase-change memory) cells}, 
year={2011}, 
date={2011-06-15},
volume={}, 
number={}, 
pages={302--303}, 
keywords={conference, CMOS memory circuits,antimony compounds,chalcogenide glasses,germanium compounds,logic circuits,phase change memories,programmable circuits,random-access storage,tellurium compounds,CMOS technology,Ge2Sb2Te5,PCM mushroom cell,digital look-up table circuit,nonvolatile logic functions,nonvolatile look-up table design,phase-change memory,programmable logic functions,resistance transformation ratio,size 90 nm,voltage 1 V,CMOS integrated circuits,Logic gates,Phase change materials,Phase change random access memory,Resistance,Table lookup}, 
doi={}, 
ISSN={2158-5636}, 
month={June},
note={(Acceptance Rate: <u>28\%</u>, 115 out of 409)},
}

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