Recent advances in defect-selective etching of GaN. Weyher, J., Brown, P., Rouvière, J., Wosinski, T, Zauner, A., & Grzegory, I Journal of Crystal Growth, 210(1-3):151–156, March, 2000. ![Recent advances in defect-selective etching of GaN [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi bibtex @article{weyher_recent_2000,
title = {Recent advances in defect-selective etching of {GaN}},
volume = {210},
issn = {00220248},
url = {https://linkinghub.elsevier.com/retrieve/pii/S0022024899006697},
doi = {10.1016/S0022-0248(99)00669-7},
language = {en},
number = {1-3},
urldate = {2023-05-18},
journal = {Journal of Crystal Growth},
author = {Weyher, J.L and Brown, P.D and Rouvière, J.L and Wosinski, T and Zauner, A.R.A and Grzegory, I},
month = mar,
year = {2000},
pages = {151--156},
}
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