Imaging Strain Fields. Williams, D. B. & Carter, C. B. In Williams, D. B. & Carter, C. B., editors, Transmission Electron Microscopy: A Textbook for Materials Science, volume 26, pages 441–461. Springer US, Boston, MA, 2009. ![Imaging Strain Fields [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex As we discussed in Chapter 24, bending of the lattice planes causes a change in the diffraction conditions and therefore a change in the contrast of the image. The presence of a lattice defect in the specimen causes the planes to bend close to the defect. The special feature here is that the bending varies not just laterally, but also through the specimen. Since the details of the bending generally depend on the characteristics of the defect, we can learn about the defect by studying the contrast in the TEM image. This simple principle has led to one of the main applications of TEM, namely, the study of defects in crystalline materials. We can claim that our understanding of the whole field of dislocations and interfaces, for example, has advanced because of TEM. We have even discovered new defects using TEM—like the stacking-fault tetrahedron, the faulted dipole, and the multipole.
@incollection{williams_imaging_2009,
address = {Boston, MA},
title = {Imaging {Strain} {Fields}},
volume = {26},
isbn = {978-0-387-76501-3},
url = {https://doi.org/10.1007/978-0-387-76501-3_26},
abstract = {As we discussed in Chapter 24, bending of the lattice planes causes a change in the diffraction conditions and therefore a change in the contrast of the image. The presence of a lattice defect in the specimen causes the planes to bend close to the defect. The special feature here is that the bending varies not just laterally, but also through the specimen. Since the details of the bending generally depend on the characteristics of the defect, we can learn about the defect by studying the contrast in the TEM image. This simple principle has led to one of the main applications of TEM, namely, the study of defects in crystalline materials. We can claim that our understanding of the whole field of dislocations and interfaces, for example, has advanced because of TEM. We have even discovered new defects using TEM—like the stacking-fault tetrahedron, the faulted dipole, and the multipole.},
language = {en},
urldate = {2021-09-02},
booktitle = {Transmission {Electron} {Microscopy}: {A} {Textbook} for {Materials} {Science}},
publisher = {Springer US},
author = {Williams, David B. and Carter, C. Barry},
editor = {Williams, David B. and Carter, C. Barry},
year = {2009},
doi = {10.1007/978-0-387-76501-3_26},
keywords = {Burger Vector, Dislocation Loop, Edge Dislocation, Screw Dislocation, Strain Field},
pages = {441--461},
}
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