Weak-Beam Dark-Field Microscopy. Williams, D. B. & Carter, C. B. In Williams, D. B. & Carter, C. B., editors, Transmission Electron Microscopy: A Textbook for Materials Science, volume 27, pages 463–481. Springer US, Boston, MA, 2009. ![Weak-Beam Dark-Field Microscopy [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex The term ‘weak-beam microscopy’ refers to the formation of a diffraction-contrast image in either BF or DF where the useful information is transferred by weakly excited beams. The DF approach has been more widely used, in part because it can be understood using quite simple physical models. It also gives stronger contrast; we see white lines on a dark gray background. This chapter will be concerned only with the DF approach. Historically, the weak-beam dark-field (WBDF often abbreviated to WB) method became important because under certain special diffraction conditions, dislocations can be imaged as narrow lines which are approximately 1.5nm wide. Equally important is the fact that the positions of these lines are well defined with respect to the dislocation cores; they are also relatively insensitive to both the foil thickness and the position of the dislocations in the specimen. The technique is particularly useful if you are studying dissociated dislocations where pairs of partial dislocations may only be ~4 nm apart and yet this separation greatly affects the properties of the material.
@incollection{williams_weak-beam_2009,
address = {Boston, MA},
title = {Weak-{Beam} {Dark}-{Field} {Microscopy}},
volume = {27},
isbn = {978-0-387-76501-3},
url = {https://doi.org/10.1007/978-0-387-76501-3_27},
abstract = {The term ‘weak-beam microscopy’ refers to the formation of a diffraction-contrast image in either BF or DF where the useful information is transferred by weakly excited beams. The DF approach has been more widely used, in part because it can be understood using quite simple physical models. It also gives stronger contrast; we see white lines on a dark gray background. This chapter will be concerned only with the DF approach. Historically, the weak-beam dark-field (WBDF often abbreviated to WB) method became important because under certain special diffraction conditions, dislocations can be imaged as narrow lines which are approximately 1.5nm wide. Equally important is the fact that the positions of these lines are well defined with respect to the dislocation cores; they are also relatively insensitive to both the foil thickness and the position of the dislocations in the specimen. The technique is particularly useful if you are studying dissociated dislocations where pairs of partial dislocations may only be {\textasciitilde}4 nm apart and yet this separation greatly affects the properties of the material.},
language = {en},
urldate = {2021-09-02},
booktitle = {Transmission {Electron} {Microscopy}: {A} {Textbook} for {Materials} {Science}},
publisher = {Springer US},
author = {Williams, David B. and Carter, C. Barry},
editor = {Williams, David B. and Carter, C. Barry},
year = {2009},
doi = {10.1007/978-0-387-76501-3_27},
keywords = {Bloch Wave, Burger Vector, Diffract Beam, Dislocation Core, Partial Dislocation},
pages = {463--481},
}
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