A low power phase change memory using thermally confined TaN/TiN bottom electrode

A low power phase change memory using thermally confined TaN/TiN bottom electrode. Wu, J. Y., Breitwisch, M., Kim, S., Hsu, T. H., Cheek, R., Du, P. Y., Li, J., Lai, E. K., Zhu, Y., Wang, T. Y., Cheng, H. Y., Schrott, A., Joseph, E. A., Dasaka, R., Raoux, S., Lee, M. H., Lung, H. L., & Lam, C. In 2011 International Electron Devices Meeting (<strong>IEDM</strong>), pages 3.2.1–3.2.4, Dec, 2011.
doi bibtex

@INPROCEEDINGS{wu2011iedm, 
author={J. Y. Wu and M. Breitwisch and S. Kim and T. H. Hsu and R. Cheek and P. Y. Du and Jing Li and E. K. Lai and Y. Zhu and T. Y. Wang and H. Y. Cheng and A. Schrott and E. A. Joseph and R. Dasaka and S. Raoux and M. H. Lee and H. L. Lung and C. Lam}, 
booktitle={2011 International Electron Devices Meeting (<strong>IEDM</strong>)}, 
title={A low power phase change memory using thermally confined {TaN/TiN} bottom electrode}, 
year={2011}, 
volume={}, 
number={}, 
pages={3.2.1--3.2.4}, 
keywords={conference, conductors (electric),electrodes,heat losses,integrated circuit reliability,low-power electronics,phase change memories,tantalum compounds,thermal insulation,titanium compounds,TaN-TiN,current 30 muA,electrical conductivity,electrothermal simulation,low power PCM,low power phase change memory,size 1.5 nm,size 39 nm,storage capacity 256 Mbit,thermal barrier,thermal insulation,thermally confined bottom electrode,Electrodes,Heating,Phase change memory,Solids,Thermal resistance,Tin}, 
doi={10.1109/IEDM.2011.6131479}, 
ISSN={0163-1918}, 
month={Dec},
%note={(Acceptance Rate*: <u>33\%</u>)},
}

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