In Situ TEM Near-Field Optical Probing of Nanoscale Silicon Crystallization. Xiang, B., Hwang, D. J., In, J. B., Ryu, S., Yoo, J., Dubon, O., Minor, A. M., & Grigoropoulos, C. P. Nano Letters, 12(5):2524–2529, May, 2012. ![In Situ TEM Near-Field Optical Probing of Nanoscale Silicon Crystallization [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex Laser-based processing enables a wide variety of device configurations comprising thin films and nanostructures on sensitive, flexible substrates that are not possible with more traditional thermal annealing schemes.(1) In near-field optical probing, only small regions of a sample are illuminated by the laser beam at any given time.(2) Here we report a new technique that couples the optical near-field of the laser illumination into a transmission electron microscope (TEM) for real-time observations of the laser?materials interactions. We apply this technique to observe the transformation of an amorphous confined Si volume to a single crystal of Si using laser melting. By confinement of the material volume to nanometric dimensions, the entire amorphous precursor is within the laser spot size and transformed into a single crystal. This observation provides a path for laser processing of single-crystal seeds from amorphous precursors, a potentially transformative technique for the fabrication of solar cells and other nanoelectronic devices.(3-5)
@article{xiang_situ_2012,
title = {In {Situ} {TEM} {Near}-{Field} {Optical} {Probing} of {Nanoscale} {Silicon} {Crystallization}},
volume = {12},
issn = {1530-6984},
url = {http://dx.doi.org/10.1021/nl3007352},
doi = {10.1021/nl3007352},
abstract = {Laser-based processing enables a wide variety of device configurations comprising thin films and nanostructures on sensitive, flexible substrates that are not possible with more traditional thermal annealing schemes.(1) In near-field optical probing, only small regions of a sample are illuminated by the laser beam at any given time.(2) Here we report a new technique that couples the optical near-field of the laser illumination into a transmission electron microscope (TEM) for real-time observations of the laser?materials interactions. We apply this technique to observe the transformation of an amorphous confined Si volume to a single crystal of Si using laser melting. By confinement of the material volume to nanometric dimensions, the entire amorphous precursor is within the laser spot size and transformed into a single crystal. This observation provides a path for laser processing of single-crystal seeds from amorphous precursors, a potentially transformative technique for the fabrication of solar cells and other nanoelectronic devices.(3-5)},
number = {5},
urldate = {2012-09-27},
journal = {Nano Letters},
author = {Xiang, Bin and Hwang, David J. and In, Jung Bin and Ryu, Sang-Gil and Yoo, Jae-Hyuck and Dubon, Oscar and Minor, Andrew M. and Grigoropoulos, Costas P.},
month = may,
year = {2012},
pages = {2524--2529},
}
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