Tensile strain induced switching of magnetic states in NbSe2 and NbS2 single layers. Xu, Y., Liu, X., & Guo, W. Nanoscale, 6(21):12929–12933, October, 2014.
Paper doi abstract bibtex Two dimensional crystals, befitting nanoscale electronics and spintronics, can benefit strain-tunable applications due to their ultrathin and flexible nature. We show by first-principles calculations that tensile strain can enhance the exchange splitting of spins in NbSe2 and NbS2 single layers. Particularly, a switch from antiferro- to ferro-magnetism is realized by strain engineering. Under strains lower than 4%, an antiferromagnetic state with opposite spins aligned on the next-nearest-neighbor rows of Nb atoms is favored in energy due to a superexchange interaction; with higher strains the ground state turns to be ferromagnetic with a double exchange origin. In contrast, the VSe2 and VS2 single layers, though with the same trigonal prismatic coordination, remain ferromagnetic even under compressive strains.
@article{xu_tensile_2014,
title = {Tensile strain induced switching of magnetic states in {NbSe2} and {NbS2} single layers},
volume = {6},
issn = {2040-3372},
url = {http://pubs.rsc.org/en/content/articlelanding/2014/nr/c4nr01486c},
doi = {10.1039/C4NR01486C},
abstract = {Two dimensional crystals, befitting nanoscale electronics and spintronics, can benefit strain-tunable applications due to their ultrathin and flexible nature. We show by first-principles calculations that tensile strain can enhance the exchange splitting of spins in NbSe2 and NbS2 single layers. Particularly, a switch from antiferro- to ferro-magnetism is realized by strain engineering. Under strains lower than 4\%, an antiferromagnetic state with opposite spins aligned on the next-nearest-neighbor rows of Nb atoms is favored in energy due to a superexchange interaction; with higher strains the ground state turns to be ferromagnetic with a double exchange origin. In contrast, the VSe2 and VS2 single layers, though with the same trigonal prismatic coordination, remain ferromagnetic even under compressive strains.},
language = {en},
number = {21},
urldate = {2016-12-13},
journal = {Nanoscale},
author = {Xu, Ying and Liu, Xiaofei and Guo, Wanlin},
month = oct,
year = {2014},
pages = {12929--12933},
}
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{"_id":"SegAvbe5r5EooSE4Z","bibbaseid":"xu-liu-guo-tensilestraininducedswitchingofmagneticstatesinnbse2andnbs2singlelayers-2014","author_short":["Xu, Y.","Liu, X.","Guo, W."],"bibdata":{"bibtype":"article","type":"article","title":"Tensile strain induced switching of magnetic states in NbSe2 and NbS2 single layers","volume":"6","issn":"2040-3372","url":"http://pubs.rsc.org/en/content/articlelanding/2014/nr/c4nr01486c","doi":"10.1039/C4NR01486C","abstract":"Two dimensional crystals, befitting nanoscale electronics and spintronics, can benefit strain-tunable applications due to their ultrathin and flexible nature. We show by first-principles calculations that tensile strain can enhance the exchange splitting of spins in NbSe2 and NbS2 single layers. Particularly, a switch from antiferro- to ferro-magnetism is realized by strain engineering. Under strains lower than 4%, an antiferromagnetic state with opposite spins aligned on the next-nearest-neighbor rows of Nb atoms is favored in energy due to a superexchange interaction; with higher strains the ground state turns to be ferromagnetic with a double exchange origin. In contrast, the VSe2 and VS2 single layers, though with the same trigonal prismatic coordination, remain ferromagnetic even under compressive strains.","language":"en","number":"21","urldate":"2016-12-13","journal":"Nanoscale","author":[{"propositions":[],"lastnames":["Xu"],"firstnames":["Ying"],"suffixes":[]},{"propositions":[],"lastnames":["Liu"],"firstnames":["Xiaofei"],"suffixes":[]},{"propositions":[],"lastnames":["Guo"],"firstnames":["Wanlin"],"suffixes":[]}],"month":"October","year":"2014","pages":"12929–12933","bibtex":"@article{xu_tensile_2014,\n\ttitle = {Tensile strain induced switching of magnetic states in {NbSe2} and {NbS2} single layers},\n\tvolume = {6},\n\tissn = {2040-3372},\n\turl = {http://pubs.rsc.org/en/content/articlelanding/2014/nr/c4nr01486c},\n\tdoi = {10.1039/C4NR01486C},\n\tabstract = {Two dimensional crystals, befitting nanoscale electronics and spintronics, can benefit strain-tunable applications due to their ultrathin and flexible nature. We show by first-principles calculations that tensile strain can enhance the exchange splitting of spins in NbSe2 and NbS2 single layers. Particularly, a switch from antiferro- to ferro-magnetism is realized by strain engineering. Under strains lower than 4\\%, an antiferromagnetic state with opposite spins aligned on the next-nearest-neighbor rows of Nb atoms is favored in energy due to a superexchange interaction; with higher strains the ground state turns to be ferromagnetic with a double exchange origin. In contrast, the VSe2 and VS2 single layers, though with the same trigonal prismatic coordination, remain ferromagnetic even under compressive strains.},\n\tlanguage = {en},\n\tnumber = {21},\n\turldate = {2016-12-13},\n\tjournal = {Nanoscale},\n\tauthor = {Xu, Ying and Liu, Xiaofei and Guo, Wanlin},\n\tmonth = oct,\n\tyear = {2014},\n\tpages = {12929--12933},\n}\n\n\n\n\n\n\n\n","author_short":["Xu, Y.","Liu, X.","Guo, W."],"key":"xu_tensile_2014","id":"xu_tensile_2014","bibbaseid":"xu-liu-guo-tensilestraininducedswitchingofmagneticstatesinnbse2andnbs2singlelayers-2014","role":"author","urls":{"Paper":"http://pubs.rsc.org/en/content/articlelanding/2014/nr/c4nr01486c"},"metadata":{"authorlinks":{}},"html":""},"bibtype":"article","biburl":"https://bibbase.org/zotero/robertorobles","dataSources":["8vvu6PNxwEyxJxvhj"],"keywords":[],"search_terms":["tensile","strain","induced","switching","magnetic","states","nbse2","nbs2","single","layers","xu","liu","guo"],"title":"Tensile strain induced switching of magnetic states in NbSe2 and NbS2 single layers","year":2014}