Potential-induced degradation of Cu(In,Ga)Se2 photovoltaic modules. Yamaguchi, S., Jonai, S., Hara, K., Komaki, H., Shimizu-Kamikawa, Y., Shibata, H., Niki, S., Kawakami, Y., & Masuda, A. Japanese Journal of Applied Physics, 2015. ![Potential-induced degradation of Cu(In,Ga)Se2 photovoltaic modules [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex Potential-induced degradation (PID) of Cu(In,Ga)Se\textlessinf\textgreater2\textless/inf\textgreater (CIGS) photovoltaic (PV) modules fabricated from integrated submodules is investigated. PID tests were performed by applying a voltage of -1000V to connected submodule interconnector ribbons at 85 °C. The normalized energy conversion efficiency of a standard module decreases to 0.2 after the PID test for 14 days. This reveals that CIGS modules suffer PID under this experimental condition. In contrast, a module with non-alkali glass shows no degradation, which implies that the degradation occurs owing to alkali metal ions, e.g., Na+, migrating from the cover glass. The results of dynamic secondary ion mass spectrometry show Na accumulation in the n-ZnO transparent conductive oxide layer of the degraded module. A CIGS PV module with an ionomer (IO) encapsulant instead of a copolymer of ethylene and vinyl acetate shows no degradation. This reveals that the IO encapsulant can prevent PID of CIGS modules. A degraded module can recover from its performance losses by applying +1000V to connected submodule interconnector ribbons from an Al plate placed on the test module. © 2015 The Japan Society of Applied Physics.
@article{yamaguchi_potential-induced_2015,
title = {Potential-induced degradation of {Cu}({In},{Ga}){Se}2 photovoltaic modules},
volume = {54},
url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-84938524833&doi=10.7567%2fJJAP.54.08KC13&partnerID=40&md5=5473a25c5219cc2c7ddb1e9138f65ce6},
doi = {10.7567/JJAP.54.08KC13},
abstract = {Potential-induced degradation (PID) of Cu(In,Ga)Se{\textless}inf{\textgreater}2{\textless}/inf{\textgreater} (CIGS) photovoltaic (PV) modules fabricated from integrated submodules is investigated. PID tests were performed by applying a voltage of -1000V to connected submodule interconnector ribbons at 85 °C. The normalized energy conversion efficiency of a standard module decreases to 0.2 after the PID test for 14 days. This reveals that CIGS modules suffer PID under this experimental condition. In contrast, a module with non-alkali glass shows no degradation, which implies that the degradation occurs owing to alkali metal ions, e.g., Na+, migrating from the cover glass. The results of dynamic secondary ion mass spectrometry show Na accumulation in the n-ZnO transparent conductive oxide layer of the degraded module. A CIGS PV module with an ionomer (IO) encapsulant instead of a copolymer of ethylene and vinyl acetate shows no degradation. This reveals that the IO encapsulant can prevent PID of CIGS modules. A degraded module can recover from its performance losses by applying +1000V to connected submodule interconnector ribbons from an Al plate placed on the test module. © 2015 The Japan Society of Applied Physics.},
number = {8},
journal = {Japanese Journal of Applied Physics},
author = {Yamaguchi, S. and Jonai, S. and Hara, K. and Komaki, H. and Shimizu-Kamikawa, Y. and Shibata, H. and Niki, S. and Kawakami, Y. and Masuda, A.},
year = {2015}
}
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PID tests were performed by applying a voltage of -1000V to connected submodule interconnector ribbons at 85 °C. The normalized energy conversion efficiency of a standard module decreases to 0.2 after the PID test for 14 days. This reveals that CIGS modules suffer PID under this experimental condition. In contrast, a module with non-alkali glass shows no degradation, which implies that the degradation occurs owing to alkali metal ions, e.g., Na+, migrating from the cover glass. The results of dynamic secondary ion mass spectrometry show Na accumulation in the n-ZnO transparent conductive oxide layer of the degraded module. A CIGS PV module with an ionomer (IO) encapsulant instead of a copolymer of ethylene and vinyl acetate shows no degradation. This reveals that the IO encapsulant can prevent PID of CIGS modules. 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