100 GHz Plasmonic Photodetector. Yannick Salamin, Ma, P., Baeuerle, B., Emboras, A., Fedoryshyn, Y., Heni, W., Cheng, B., Josten, A., & Leuthold, J. ACS Photonics, 5(8):3291–3297, August, 2018. ![100 GHz Plasmonic Photodetector [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex Photodetectors compatible with CMOS technology have shown great potential in implementing active silicon photonics circuits, yet current technologies are facing fundamental bandwidth limitations. Here, we propose and experimentally demonstrate for the first time a plasmonic photodetector achieving simultaneously record-high bandwidth beyond 100 GHz, an internal quantum efficiency of 36% and low footprint. High-speed data reception at 72 Gbit/s is demonstrated. Such superior performance is attributed to the subwavelength confinement of the optical energy in a photoconductive based plasmonic-germanium waveguide detector that enables shortest drift paths for photogenerated carriers and a very small resistance-capacitance product. In addition, the combination of plasmonic structures with absorbing semiconductors enables efficient and highest-speed photodetection. The proposed scheme may pave the way for a cost-efficient CMOS compatible and low temperature fabricated photodetector solution for photodetection beyond 100 Gbit/s, with versatile applications in fields such as communications, microwave photonics, and THz technologies.
@article{yannick_salamin_100_2018,
title = {100 {GHz} {Plasmonic} {Photodetector}},
volume = {5},
issn = {2330-4022, 2330-4022},
url = {http://pubs.acs.org/doi/10.1021/acsphotonics.8b00525},
doi = {10.1021/acsphotonics.8b00525},
abstract = {Photodetectors compatible with CMOS technology have shown great potential in implementing active silicon photonics circuits, yet current technologies are facing fundamental bandwidth limitations. Here, we propose and experimentally demonstrate for the first time a plasmonic photodetector achieving simultaneously record-high bandwidth beyond 100 GHz, an internal quantum efficiency of 36\% and low footprint. High-speed data reception at 72 Gbit/s is demonstrated. Such superior performance is attributed to the subwavelength confinement of the optical energy in a photoconductive based plasmonic-germanium waveguide detector that enables shortest drift paths for photogenerated carriers and a very small resistance-capacitance product. In addition, the combination of plasmonic structures with absorbing semiconductors enables efficient and highest-speed photodetection. The proposed scheme may pave the way for a cost-efficient CMOS compatible and low temperature fabricated photodetector solution for photodetection beyond 100 Gbit/s, with versatile applications in fields such as communications, microwave photonics, and THz technologies.},
language = {en},
number = {8},
urldate = {2018-12-01},
journal = {ACS Photonics},
author = {{Yannick Salamin} and Ma, Ping and Baeuerle, Benedikt and Emboras, Alexandros and Fedoryshyn, Yuriy and Heni, Wolfgang and Cheng, Bojun and Josten, Arne and Leuthold, Juerg},
month = aug,
year = {2018},
pages = {3291--3297},
file = {Salamin 등 - 2018 - 100 GHz Plasmonic Photodetector.pdf:D\:\\Zotero\\storage\\UBZ8IT49\\Salamin 등 - 2018 - 100 GHz Plasmonic Photodetector.pdf:application/pdf}
}
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